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MTP35A1 - 首頁
40 30 20 10 0 50 40 30 a 10 0 Fig.1 Forward current derating curve Fig.2 Typical forward characteristics 1.0 0.5 0 500 400 300 200 100 1 Fig.3 Max non-repetitive peak25T SERIES RROOHHSS
SEMICONDUCTOR RRooHHSS www.nellsemi.com Page 5 of 6 25T Series 100 1000 3000-40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 Fig.9 Relative variation of critical rate of decrease ACS2T SERIES RROOHHSS ACS2T SeriesRRooHHSS Ⅰ-Ⅱ-Ⅲ MAX. mA Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅱ-Ⅲ MAX. mA Ⅱ MIN. QUADRANT ACS2Txxxx VD = 12 V, RL = 33Ω VD = VDRM, RL = 3.3KΩ, Tj = 125°C IT = 100 mA IG = 1.2 IGT VD = 67% VDRM, gate open, Tj = 125°C V V mA V/µs SYMBOL TEST CONDITIONS UNIT KBPC50 - NELLSEMI.COM 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 40 30 20 10 0 051 0 100 200 300 400 1 10 100 500 Fig.1 Maximum instantaneous forward voltage per leg F THREE-PHASE BRIDGE RECTIFIER, 100A MTP10008 THRU MTP10018 MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER V V SYMBOL MTP100 UNIT 1900 08 900 1100 1300 800 1000 1200 1600 1800 10 12 16 18 1700 800 1000 1200 1600 1800 V HOME | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE Each product is fully tested by the testing experts and we use advanced procedures to ensure you the best quality products. Nell's been dedicated to innovation and improving the performance and the stability of the products. Our goal is to provide the highest efficiency and quality product to our customers. 首頁 | 尼爾半導體股份有限公司 首頁 | 尼爾半導體股份有限公司. English 繁體中文 简体中文. 產品中心. 支援與服務. 關於尼爾. 聯絡尼爾. 電力模組 MOSFET/IGBT 塑封元件 橋式整流 高壓分離器件 DBC-功率組件 其他 (IGTO) 新產品 客製化產品. 下載中心 銷售代理商 應用範圍. 公司簡介 國際認證 合作 TRIACS, 100A SNUBBERLESS www.nellsemi.com Page 3 of 4 ORDERING INFORMATION SCHEME Triac series Current Voltage 100 = 100A BW = 60mA Snubberless Package type IGTSensitivity CI = ITO-247 insulated 100 T 12 CI- BW Fig.1 Maximum power dissipation versus on-state RMS 70PTXXDS SERIES RROOHHSS STANSARD SCRS, 70A Unit IGT VGD IH mA dV/dt VTM IDRM IRRM mA IL VD = 12V, RL = 33Ω VD = VDRM, RL = 3.3KΩ, RGK = 220Ω IT = 500mA, Gate open IG = 1.2×IGT VD = 67% VDRM, Gate open 0.2 1000 mA V V mA V/µs IT = 100A, tP = 380µs Tj = 125°C Tj = 25°C Tj = 25°C V µA ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified) SYMBOL TEST CONDITIONS VD = RM, V 1.55 50 RGK = 220Ω 10 MTP75 - NELLSEMI.COM MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER V V SYMBOL MTP75 UNIT 1900 08 900 1100 1300 800 1000 1200 1600 1800 10 12 16 18 1700 800 1000 1200 1600 1800 VMTP35A1 - 首頁
40 30 20 10 0 50 40 30 a 10 0 Fig.1 Forward current derating curve Fig.2 Typical forward characteristics 1.0 0.5 0 500 400 300 200 100 1 Fig.3 Max non-repetitive peak25T SERIES RROOHHSS
SEMICONDUCTOR RRooHHSS www.nellsemi.com Page 5 of 6 25T Series 100 1000 3000-40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 Fig.9 Relative variation of critical rate of decrease ACS2T SERIES RROOHHSS ACS2T SeriesRRooHHSS Ⅰ-Ⅱ-Ⅲ MAX. mA Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅱ-Ⅲ MAX. mA Ⅱ MIN. QUADRANT ACS2Txxxx VD = 12 V, RL = 33Ω VD = VDRM, RL = 3.3KΩ, Tj = 125°C IT = 100 mA IG = 1.2 IGT VD = 67% VDRM, gate open, Tj = 125°C V V mA V/µs SYMBOL TEST CONDITIONS UNIT KBPC50 - NELLSEMI.COM 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 40 30 20 10 0 051 0 100 200 300 400 1 10 100 500 Fig.1 Maximum instantaneous forward voltage per leg F THREE-PHASE BRIDGE RECTIFIER, 100A MTP10008 THRU MTP10018 MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER V V SYMBOL MTP100 UNIT 1900 08 900 1100 1300 800 1000 1200 1600 1800 10 12 16 18 1700 800 1000 1200 1600 1800 VAPPLICATIONS
NPS,半導體,尼爾半導體APPLICATIONS
NPS,半導體,尼爾半導體. Center amplifying gate; Metal case with ceramic insulator; International standard case TO-2220AB(E-PUK)APPLICATIONS
NPS,半導體,尼爾半導體. Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting THREE-PHASE BRIDGE RECTIFIER, 100A RRooHHSS Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER V V SYMBOL MTP100..D UNIT 1900 08 900 1100 1300 800 1000 1200 1600 1800 10 12 16 18 1700 800 1000 1200 1600 1800 V 4PT SERIES RROOHHSS SENSITIVE GATE SCRS, 4A 4ptxxxx unit igt vgd ih ma dv/dt vtm idrm ma il vd = 12v, rl = 30Ω vd = vdrm, rl = 3.3kΩ, rgk = 220Ω, tj = 125°c it = 50ma, rgk = 1kΩ ig = 1ma, rgk = 1kΩ vd = 67% vdrm, rgk = 1kΩ, tj = 125°c 0.8 0.1 5 6 10 µa v v ma v/µs it = 8a, tp = 380 µs tj = 125°c tj= 25°c tj = 25°c v µa electrical specifications symbol test conditions 1.6 5 1 vd=vdrm, vr=vrrm rgk=1k min. MEDIUM POWER THYRISTORS (STUD VERSION), 25A SEMICONDUCTOR RRooHHSS Nell High Power Products M a x i m u m a l l o w a b l e c a s e t e m p e r a t u r e (˚ C) 0 5 10 15 20 25 30 0 10 20 30 40 0 5 10 15 20 25 30 25 50 75 M N HIGH POWER PRODUCTS TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power PGM tp 5 ms, TJ = TJ maximum W Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum Maximum peak gate current IGM tp 5 ms, TJ = TJ maximum A Maximum peak negative 150FD(R)SERIES RROOHHSS SEMICONDUCTOR Nell High Power Products 150FD(R)Series RRooHHSS Fig.4 Forward power loss characteristics M a x i m u m A v e r a g e f o w a r d p o w e r l a s s (W) Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) NKD55A/NKJ55A/NKC55A/NKE55A SERIES RROOHHSS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT-40 to 150 0.33 0.1 4 3 115 g Nm J u nc ti on a d s r a get emp e r
150D(R)SERIES RROOHHSS M a x i m u m a l l o w a b l e c a s e t e m p e a t u r e (° C) Average forward current (A) Average forward current (A) Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics HOME | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE Each product is fully tested by the testing experts and we use advanced procedures to ensure you the best quality products. Nell's been dedicated to innovation and improving the performance and the stability of the products. Our goal is to provide the highest efficiency and quality product to our customers. 首頁 | 尼爾半導體股份有限公司 首頁 | 尼爾半導體股份有限公司. English 繁體中文 简体中文. 產品中心. 支援與服務. 關於尼爾. 聯絡尼爾. 電力模組 MOSFET/IGBT 塑封元件 橋式整流 高壓分離器件 DBC-功率組件 其他 (IGTO) 新產品 客製化產品. 下載中心 銷售代理商 應用範圍. 公司簡介 國際認證 合作 PRODUCTS | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE NPS,半導體,尼爾半導體DISTRIBUTORS
New Taipei City 221, Taiwan (R.O.C.) Hui Guan Zheng-Yuan Electronics (Shenzhen) Co., Ltd. wgzusales@qq.com. 5F, 19 Kefa Road, China Resources Land tower D, Nanshan, Shenzhen,China 518000. Distributor Application Form. 01. Fill up the application form Please fill up the distributor application form with your company's profile. 02. TRIACS, 100A SNUBBERLESS www.nellsemi.com Page 3 of 4 ORDERING INFORMATION SCHEME Triac series Current Voltage 100 = 100A BW = 60mA Snubberless Package type IGTSensitivity CI = ITO-247 insulated 100 T 12 CI- BW Fig.1 Maximum power dissipation versus on-state RMS 70PTXXDS SERIES RROOHHSS STANSARD SCRS, 70A Unit IGT VGD IH mA dV/dt VTM IDRM IRRM mA IL VD = 12V, RL = 33Ω VD = VDRM, RL = 3.3KΩ, RGK = 220Ω IT = 500mA, Gate open IG = 1.2×IGT VD = 67% VDRM, Gate open 0.2 1000 mA V V mA V/µs IT = 100A, tP = 380µs Tj = 125°C Tj = 25°C Tj = 25°C V µA ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified) SYMBOL TEST CONDITIONS VD = RM, V 1.55 50 RGK = 220Ω 10MTP35A1 - 首頁
40 30 20 10 0 50 40 30 a 10 0 Fig.1 Forward current derating curve Fig.2 Typical forward characteristics 1.0 0.5 0 500 400 300 200 100 1 Fig.3 Max non-repetitive peak MTP75 - NELLSEMI.COM MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER V V SYMBOL MTP75 UNIT 1900 08 900 1100 1300 800 1000 1200 1600 1800 10 12 16 18 1700 800 1000 1200 1600 1800 V 16D(R)SERIES RROOHHSS M a x i m u m A l l o w a b l e C a s e T e m p e r a t u r e (˚ C) M a x i m u m 0 A v e r a g e 8 F o r w a r d P o w e r L o s s A (W) Average Forward Current (A) Average Forward Current (A) Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) 蕭特基/快恢復二極體SCHOTTKY/FRED DIODE 特點: 尼爾的二極體除了做整流橋外還有FRED和SBD。FR ED全名為Fast Recovery Epitaxial Diode(快恢復二極體),Epitaxial為一種 芯片的製程,係指在一基板(Substrate)長出的 一層單結晶薄膜而這層薄膜會在一個平面之上進行規則排列 的成長行為。 SBD(Schottky Barrier Diodes)其特點在於有較低的導通電壓,比快 HOME | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE Each product is fully tested by the testing experts and we use advanced procedures to ensure you the best quality products. Nell's been dedicated to innovation and improving the performance and the stability of the products. Our goal is to provide the highest efficiency and quality product to our customers. 首頁 | 尼爾半導體股份有限公司 首頁 | 尼爾半導體股份有限公司. English 繁體中文 简体中文. 產品中心. 支援與服務. 關於尼爾. 聯絡尼爾. 電力模組 MOSFET/IGBT 塑封元件 橋式整流 高壓分離器件 DBC-功率組件 其他 (IGTO) 新產品 客製化產品. 下載中心 銷售代理商 應用範圍. 公司簡介 國際認證 合作 PRODUCTS | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE NPS,半導體,尼爾半導體DISTRIBUTORS
New Taipei City 221, Taiwan (R.O.C.) Hui Guan Zheng-Yuan Electronics (Shenzhen) Co., Ltd. wgzusales@qq.com. 5F, 19 Kefa Road, China Resources Land tower D, Nanshan, Shenzhen,China 518000. Distributor Application Form. 01. Fill up the application form Please fill up the distributor application form with your company's profile. 02. TRIACS, 100A SNUBBERLESS www.nellsemi.com Page 3 of 4 ORDERING INFORMATION SCHEME Triac series Current Voltage 100 = 100A BW = 60mA Snubberless Package type IGTSensitivity CI = ITO-247 insulated 100 T 12 CI- BW Fig.1 Maximum power dissipation versus on-state RMS 70PTXXDS SERIES RROOHHSS STANSARD SCRS, 70A Unit IGT VGD IH mA dV/dt VTM IDRM IRRM mA IL VD = 12V, RL = 33Ω VD = VDRM, RL = 3.3KΩ, RGK = 220Ω IT = 500mA, Gate open IG = 1.2×IGT VD = 67% VDRM, Gate open 0.2 1000 mA V V mA V/µs IT = 100A, tP = 380µs Tj = 125°C Tj = 25°C Tj = 25°C V µA ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified) SYMBOL TEST CONDITIONS VD = RM, V 1.55 50 RGK = 220Ω 10MTP35A1 - 首頁
40 30 20 10 0 50 40 30 a 10 0 Fig.1 Forward current derating curve Fig.2 Typical forward characteristics 1.0 0.5 0 500 400 300 200 100 1 Fig.3 Max non-repetitive peak MTP75 - NELLSEMI.COM MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER V V SYMBOL MTP75 UNIT 1900 08 900 1100 1300 800 1000 1200 1600 1800 10 12 16 18 1700 800 1000 1200 1600 1800 V 16D(R)SERIES RROOHHSS M a x i m u m A l l o w a b l e C a s e T e m p e r a t u r e (˚ C) M a x i m u m 0 A v e r a g e 8 F o r w a r d P o w e r L o s s A (W) Average Forward Current (A) Average Forward Current (A) Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) 蕭特基/快恢復二極體SCHOTTKY/FRED DIODE 特點: 尼爾的二極體除了做整流橋外還有FRED和SBD。FR ED全名為Fast Recovery Epitaxial Diode(快恢復二極體),Epitaxial為一種 芯片的製程,係指在一基板(Substrate)長出的 一層單結晶薄膜而這層薄膜會在一個平面之上進行規則排列 的成長行為。 SBD(Schottky Barrier Diodes)其特點在於有較低的導通電壓,比快 HOME | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE Each product is fully tested by the testing experts and we use advanced procedures to ensure you the best quality products. Nell's been dedicated to innovation and improving the performance and the stability of the products. Our goal is to provide the highest efficiency and quality product to our customers.APPLICATIONS
NPS,半導體,尼爾半導體APPLICATIONS
NPS,半導體,尼爾半導體. Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting PRODUCTS | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE 產品中心. Bridge Rectifier. Leading the new power. semiconductor. Leading the new power semiconductor. Bridge Rectifier. Single-Phase Bridge Rectifier Three Phase Bridge Module Three Phase Bridge+SCR Module. Power Modules. Diode Module Thyristor Module Bridge Rectifier+Thyristor Module Schottky Module FRED Module.APPLICATIONS
NPS,半導體,尼爾半導體. Center amplifying gate; Metal case with ceramic insulator; International standard case TO-2220AB(E-PUK) MTP75 - NELLSEMI.COM MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER V V SYMBOL MTP75 UNIT 1900 08 900 1100 1300 800 1000 1200 1600 1800 10 12 16 18 1700 800 1000 1200 1600 1800 V KBPC50 - NELLSEMI.COM 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 40 30 20 10 0 051 0 100 200 300 400 1 10 100 500 Fig.1 Maximum instantaneous forward voltage per leg F 蕭特基/快恢復二極體SCHOTTKY/FRED DIODE NPS,半導體,尼爾半導體. 特點: 尼爾的二極體除了做整流橋外還有FRED和SBD。FR ED全名為Fast Recovery Epitaxial Diode(快恢復二極體),Epitaxial為一種 芯片的製程,係指在一基板(Substrate)長出的 一層單結晶薄膜而這層薄膜會在一個平面之上進行規則排列 的成長行為。 SBD(Schottky Barrier Diodes)其特點在於有較低的 SCHOTTKY RECTIFIER, 600A/200V NKSD601-200RRooHHSS Schottky Rectifier, 600A/200V FEATURES 175°C TJ operation Center tap module Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness andNKT NKH 135A SERIES
SEMICONDUCTOR TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power PGM tp 5 ms, TJ = TJ maximum 10 W Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 3 Maximum peak gate current IGM tp 5 ms, TJ = TJ maximum 3 A HOME | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE Each product is fully tested by the testing experts and we use advanced procedures to ensure you the best quality products. Nell's been dedicated to innovation and improving the performance and the stability of the products. Our goal is to provide the highest efficiency and quality product to our customers. 首頁 | 尼爾半導體股份有限公司 首頁 | 尼爾半導體股份有限公司. English 繁體中文 简体中文. 產品中心. 支援與服務. 關於尼爾. 聯絡尼爾. 電力模組 MOSFET/IGBT 塑封元件 橋式整流 高壓分離器件 DBC-功率組件 其他 (IGTO) 新產品 客製化產品. 下載中心 銷售代理商 應用範圍. 公司簡介 國際認證 合作 TRIACS, 100A SNUBBERLESS www.nellsemi.com Page 3 of 4 ORDERING INFORMATION SCHEME Triac series Current Voltage 100 = 100A BW = 60mA Snubberless Package type IGTSensitivity CI = ITO-247 insulated 100 T 12 CI- BW Fig.1 Maximum power dissipation versus on-state RMS 4T SERIES RROOHHSS TRIACS, 4A www.nellsemi.com Page 5 of 7 1 10 100 ITM (A) 0 5 10 15 20 25 30 35 40 ITSM (A) Fig.5 On-state characteristics (maximum values). Fig.6 Surge peak on-state current versus number NKD250/NKJ250/NKC250 SERIES RROOHHSS www.nellsemi.com page 2 of 4 electrical specifications voltage ratings type number voltage code vrrm, maximum repetitive peak reverse voltage v vrsm, maximum non-repetitive peak reverse voltage v irrm maximum at tj maximum ma nkd250 08 800 900 NKD110A/NKJ110A/NKC110A/NKE110A SERIES RROOHHSS www.nellsemi.com Page 3 of 6 1 2 3 4 Device code NKD A 4 110 / 16 1 2 3 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT-40 to 150 0.18 MTP75 - NELLSEMI.COM MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER V V SYMBOL MTP75 UNIT 1900 08 900 1100 1300 800 1000 1200 1600 1800 10 12 16 18 1700 800 1000 1200 1600 1800 V NKD55A/NKJ55A/NKC55A/NKE55A SERIES RROOHHSS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT-40 to 150 0.33 0.1 4 3 115 g Nm J u nc ti on a d s r a get emp e r
KBPC50 - NELLSEMI.COM 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 40 30 20 10 0 051 0 100 200 300 400 1 10 100 500 Fig.1 Maximum instantaneous forward voltage per leg F NKD160A/NKJ160A/NKC160A SERIES RROOHHSS SEMICONDUCTOR RRooHHSS FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IF(AV) 180° conduction, half sine wave Maximum RMS on-state current IF(RMS) Maximum peak, one-cycle, on-state A HOME | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE Each product is fully tested by the testing experts and we use advanced procedures to ensure you the best quality products. Nell's been dedicated to innovation and improving the performance and the stability of the products. Our goal is to provide the highest efficiency and quality product to our customers. 首頁 | 尼爾半導體股份有限公司 首頁 | 尼爾半導體股份有限公司. English 繁體中文 简体中文. 產品中心. 支援與服務. 關於尼爾. 聯絡尼爾. 電力模組 MOSFET/IGBT 塑封元件 橋式整流 高壓分離器件 DBC-功率組件 其他 (IGTO) 新產品 客製化產品. 下載中心 銷售代理商 應用範圍. 公司簡介 國際認證 合作 TRIACS, 100A SNUBBERLESS www.nellsemi.com Page 3 of 4 ORDERING INFORMATION SCHEME Triac series Current Voltage 100 = 100A BW = 60mA Snubberless Package type IGTSensitivity CI = ITO-247 insulated 100 T 12 CI- BW Fig.1 Maximum power dissipation versus on-state RMS 4T SERIES RROOHHSS TRIACS, 4A www.nellsemi.com Page 5 of 7 1 10 100 ITM (A) 0 5 10 15 20 25 30 35 40 ITSM (A) Fig.5 On-state characteristics (maximum values). Fig.6 Surge peak on-state current versus number NKD250/NKJ250/NKC250 SERIES RROOHHSS www.nellsemi.com page 2 of 4 electrical specifications voltage ratings type number voltage code vrrm, maximum repetitive peak reverse voltage v vrsm, maximum non-repetitive peak reverse voltage v irrm maximum at tj maximum ma nkd250 08 800 900 NKD110A/NKJ110A/NKC110A/NKE110A SERIES RROOHHSS www.nellsemi.com Page 3 of 6 1 2 3 4 Device code NKD A 4 110 / 16 1 2 3 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT-40 to 150 0.18 MTP75 - NELLSEMI.COM MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER V V SYMBOL MTP75 UNIT 1900 08 900 1100 1300 800 1000 1200 1600 1800 10 12 16 18 1700 800 1000 1200 1600 1800 V NKD55A/NKJ55A/NKC55A/NKE55A SERIES RROOHHSS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT-40 to 150 0.33 0.1 4 3 115 g Nm J u nc ti on a d s r a get emp e r
KBPC50 - NELLSEMI.COM 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 40 30 20 10 0 051 0 100 200 300 400 1 10 100 500 Fig.1 Maximum instantaneous forward voltage per leg F NKD160A/NKJ160A/NKC160A SERIES RROOHHSS SEMICONDUCTOR RRooHHSS FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IF(AV) 180° conduction, half sine wave Maximum RMS on-state current IF(RMS) Maximum peak, one-cycle, on-state AAPPLICATIONS
NPS,半導體,尼爾半導體APPLICATIONS
NPS,半導體,尼爾半導體. Glass passivated chips; High surge capability; Isolation voltage up to 1600VAPPLICATIONS
NPS,半導體,尼爾半導體. In 21 century, the energy issue has become the worldwide concern. The idea of new energy is born in this environment and gone virus all over the world.DISTRIBUTORS
New Taipei City 221, Taiwan (R.O.C.) Hui Guan Zheng-Yuan Electronics (Shenzhen) Co., Ltd. wgzusales@qq.com. 5F, 19 Kefa Road, China Resources Land tower D, Nanshan, Shenzhen,China 518000. Distributor Application Form. 01. Fill up the application form Please fill up the distributor application form with your company's profile. 02. PRODUCTS | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE 產品中心. Bridge Rectifier. Leading the new power. semiconductor. Leading the new power semiconductor. Bridge Rectifier. Single-Phase Bridge Rectifier Three Phase Bridge Module Three Phase Bridge+SCR Module. Power Modules. Diode Module Thyristor Module Bridge Rectifier+Thyristor Module Schottky Module FRED Module. 4T SERIES RROOHHSS TRIACS, 4A www.nellsemi.com Page 5 of 7 1 10 100 ITM (A) 0 5 10 15 20 25 30 35 40 ITSM (A) Fig.5 On-state characteristics (maximum values). Fig.6 Surge peak on-state current versus number25T SERIES RROOHHSS
SEMICONDUCTOR RRooHHSS www.nellsemi.com Page 5 of 6 25T Series 100 1000 3000-40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 Fig.9 Relative variation of critical rate of decrease THREE-PHASE BRIDGE RECTIFIER, 100A RRooHHSS Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER V V SYMBOL MTP100..D UNIT 1900 08 900 1100 1300 800 1000 1200 1600 1800 10 12 16 18 1700 800 1000 1200 1600 1800 V 120KQ12K SERIES ROHS V (2) TM MAX. Vt0 (2) Thresholdvoltage MAX. Dynamic T = 125°Cresistance MAX. IDRM IRRM MAX. mA Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. ITM = 100 A, tP = 380 µs T = 125°Cj T = 25°Cj j T = 125°Cj T = 25°Cj 1.25 0.8 ACS2T SERIES RROOHHSS ACS2T SeriesRRooHHSS Ⅰ-Ⅱ-Ⅲ MAX. mA Ⅰ-Ⅱ-Ⅲ Ⅰ-Ⅱ-Ⅲ MAX. mA Ⅱ MIN. QUADRANT ACS2Txxxx VD = 12 V, RL = 33Ω VD = VDRM, RL = 3.3KΩ, Tj = 125°C IT = 100 mA IG = 1.2 IGT VD = 67% VDRM, gate open, Tj = 125°C V V mA V/µs SYMBOL TEST CONDITIONS UNIT HOME | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE Each product is fully tested by the testing experts and we use advanced procedures to ensure you the best quality products. Nell's been dedicated to innovation and improving the performance and the stability of the products. Our goal is to provide the highest efficiency and quality product to our customers. 首頁 | 尼爾半導體股份有限公司 首頁 | 尼爾半導體股份有限公司. English 繁體中文 简体中文. 產品中心. 支援與服務. 關於尼爾. 聯絡尼爾. 電力模組 MOSFET/IGBT 塑封元件 橋式整流 高壓分離器件 DBC-功率組件 其他 (IGTO) 新產品 客製化產品. 下載中心 銷售代理商 應用範圍. 公司簡介 國際認證 合作 TRIACS, 100A SNUBBERLESS www.nellsemi.com Page 3 of 4 ORDERING INFORMATION SCHEME Triac series Current Voltage 100 = 100A BW = 60mA Snubberless Package type IGTSensitivity CI = ITO-247 insulated 100 T 12 CI- BW Fig.1 Maximum power dissipation versus on-state RMS NKD250/NKJ250/NKC250 SERIES RROOHHSS www.nellsemi.com page 2 of 4 electrical specifications voltage ratings type number voltage code vrrm, maximum repetitive peak reverse voltage v vrsm, maximum non-repetitive peak reverse voltage v irrm maximum at tj maximum ma nkd250 08 800 900 NKD55A/NKJ55A/NKC55A/NKE55A SERIES RROOHHSS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT-40 to 150 0.33 0.1 4 3 115 g Nm J u nc ti on a d s r a get emp e r
NKD110A/NKJ110A/NKC110A/NKE110A SERIES RROOHHSS www.nellsemi.com Page 3 of 6 1 2 3 4 Device code NKD A 4 110 / 16 1 2 3 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT-40 to 150 0.18 MTP75 - NELLSEMI.COM MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER V V SYMBOL MTP75 UNIT 1900 08 900 1100 1300 800 1000 1200 1600 1800 10 12 16 18 1700 800 1000 1200 1600 1800 V NST70KQ SERIES RROOHHSS www.nellsemi.com Page 5 of 5 Nell High Power Products NST70KQ SeriesRRooHHSS SOT-227 All dimensions in millimeters (inches) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter NKD160A/NKJ160A/NKC160A SERIES RROOHHSS SEMICONDUCTOR RRooHHSS FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IF(AV) 180° conduction, half sine wave Maximum RMS on-state current IF(RMS) Maximum peak, one-cycle, on-state A KBPC50 - NELLSEMI.COM 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 40 30 20 10 0 051 0 100 200 300 400 1 10 100 500 Fig.1 Maximum instantaneous forward voltage per leg F HOME | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE Each product is fully tested by the testing experts and we use advanced procedures to ensure you the best quality products. Nell's been dedicated to innovation and improving the performance and the stability of the products. Our goal is to provide the highest efficiency and quality product to our customers. 首頁 | 尼爾半導體股份有限公司 首頁 | 尼爾半導體股份有限公司. English 繁體中文 简体中文. 產品中心. 支援與服務. 關於尼爾. 聯絡尼爾. 電力模組 MOSFET/IGBT 塑封元件 橋式整流 高壓分離器件 DBC-功率組件 其他 (IGTO) 新產品 客製化產品. 下載中心 銷售代理商 應用範圍. 公司簡介 國際認證 合作 TRIACS, 100A SNUBBERLESS www.nellsemi.com Page 3 of 4 ORDERING INFORMATION SCHEME Triac series Current Voltage 100 = 100A BW = 60mA Snubberless Package type IGTSensitivity CI = ITO-247 insulated 100 T 12 CI- BW Fig.1 Maximum power dissipation versus on-state RMS NKD250/NKJ250/NKC250 SERIES RROOHHSS www.nellsemi.com page 2 of 4 electrical specifications voltage ratings type number voltage code vrrm, maximum repetitive peak reverse voltage v vrsm, maximum non-repetitive peak reverse voltage v irrm maximum at tj maximum ma nkd250 08 800 900 NKD55A/NKJ55A/NKC55A/NKE55A SERIES RROOHHSS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT-40 to 150 0.33 0.1 4 3 115 g Nm J u nc ti on a d s r a get emp e r
NKD110A/NKJ110A/NKC110A/NKE110A SERIES RROOHHSS www.nellsemi.com Page 3 of 6 1 2 3 4 Device code NKD A 4 110 / 16 1 2 3 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT-40 to 150 0.18 MTP75 - NELLSEMI.COM MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER V V SYMBOL MTP75 UNIT 1900 08 900 1100 1300 800 1000 1200 1600 1800 10 12 16 18 1700 800 1000 1200 1600 1800 V NST70KQ SERIES RROOHHSS www.nellsemi.com Page 5 of 5 Nell High Power Products NST70KQ SeriesRRooHHSS SOT-227 All dimensions in millimeters (inches) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter NKD160A/NKJ160A/NKC160A SERIES RROOHHSS SEMICONDUCTOR RRooHHSS FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IF(AV) 180° conduction, half sine wave Maximum RMS on-state current IF(RMS) Maximum peak, one-cycle, on-state A KBPC50 - NELLSEMI.COM 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 40 30 20 10 0 051 0 100 200 300 400 1 10 100 500 Fig.1 Maximum instantaneous forward voltage per leg F HOME | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE Each product is fully tested by the testing experts and we use advanced procedures to ensure you the best quality products. Nell's been dedicated to innovation and improving the performance and the stability of the products. Our goal is to provide the highest efficiency and quality product to our customers. PRODUCTS | NELL POWER SEMICONDUCTOR CO., LTD.TRANSLATE THIS PAGE NPS,半導體,尼爾半導體APPLICATIONS
NPS,半導體,尼爾半導體. In 21 century, the energy issue has become the worldwide concern. The idea of new energy is born in this environment and gone virus all over the world.APPLICATIONS
NPS,半導體,尼爾半導體APPLICATIONS
The application of inverter is related to the industries such as electricity, metallurgy, cement, coal, petrochemicals and appliances. Therefore, the Inverter market is 4T SERIES RROOHHSS TRIACS, 4A www.nellsemi.com Page 5 of 7 1 10 100 ITM (A) 0 5 10 15 20 25 30 35 40 ITSM (A) Fig.5 On-state characteristics (maximum values). Fig.6 Surge peak on-state current versus number NST70KQ SERIES RROOHHSS www.nellsemi.com Page 5 of 5 Nell High Power Products NST70KQ SeriesRRooHHSS SOT-227 All dimensions in millimeters (inches) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter 150D(R)SERIES RROOHHSS M a x i m u m a l l o w a b l e c a s e t e m p e a t u r e (° C) Average forward current (A) Average forward current (A) Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics NKD350/NKJ350/NKC350 SERIES RROOHHSS www.nellsemi.com Page 3 of 4 1 2 3 Device code NKD 350 / 16 1 2 3 Ordering Information Tabel--- Module type, NKD, NKJ and NKC for ( Diode + Diode ) module Current rating : IF(AV) Voltage code x 100 = VRRM Fig.1 On-state current vs. voltage characteristic KBPC50 - NELLSEMI.COM 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 40 30 20 10 0 051 0 100 200 300 400 1 10 100 500 Fig.1 Maximum instantaneous forward voltage per leg F English 繁體中文 简体中文產品中心
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