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MRAM COMPANIES
US-based Despatch Industries, established in 1902, is a specialized thermal-processing equipment maker. Despatch is involved in three markets - thermal, solar and carbon fiber. Despatch also offers equipment for the data storage industry. Despatch installed the world’s first 50-wafer fully automated MRAM system at Freescale, inaddition to a
SOT-MRAM | MRAM-INFO SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed. Now researchers at the Tokyo Institute of Technology havedeveloped
SPIN MEMORY
Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability andINTEL | MRAM-INFO
Intel's new STT-MRAM features 20 nm write times, 4 ns read times, an endurance of 1012 cycles and memory retention of one second at 110 degrees. The bit rates are good enough to be handled with error-correcting code (ECC) techniques. To achieve these features, Intel reduced the magnetic junction size to 55 nm (from 70-80 nm it had achieved before).TSMC | MRAM-INFO
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two. AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbTOSHIBA | MRAM-INFO
Toshiba presented a new STT-MRAM 1-Mb test chip that provides speed performance capable of 3.3-ns access to in-cache memory. The newly developed circuit consumes about 80% less power compared to a conventional SRAM as embedded memory - and Toshiba says that this makes it the best power-performing embedded memory. GLOBALFOUNDRIES AND EVADERIS ARE DEVELOPING AN ULTRA-LOW GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.. The two companies say that this new reference design will bring together the superior reliability and versatility of GF’s 22FDX eMRAM and eVaderis’ ultra-low power IP. COGNIMEM'S COGNITIVE PATTERN RECOGNITION SYSTEMS USE Everspin announced today that CogniMem's CogniBlox product line uses their 4MB MRAM chips. The CogniBlox is a reconfigurable and stackable pattern recognition module that enables a cognitive computingplatform.
TSMC PLANS TO INTRODUCE 16NM EMBEDDED MRAM TSMC plans to introduce 16nm embedded MRAM. TSMC announced, during the company's virtual European technology symposium, that it is developing MRAM technologies for its 16nm FinFET platform. The company expects to offer flash-like configuration risk production starting in 4Q21 and RAM-like risk production scheduled for 4Q22.MRAM COMPANIES
US-based Despatch Industries, established in 1902, is a specialized thermal-processing equipment maker. Despatch is involved in three markets - thermal, solar and carbon fiber. Despatch also offers equipment for the data storage industry. Despatch installed the world’s first 50-wafer fully automated MRAM system at Freescale, inaddition to a
SOT-MRAM | MRAM-INFO SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed. Now researchers at the Tokyo Institute of Technology havedeveloped
SPIN MEMORY
Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability andINTEL | MRAM-INFO
Intel's new STT-MRAM features 20 nm write times, 4 ns read times, an endurance of 1012 cycles and memory retention of one second at 110 degrees. The bit rates are good enough to be handled with error-correcting code (ECC) techniques. To achieve these features, Intel reduced the magnetic junction size to 55 nm (from 70-80 nm it had achieved before).TSMC | MRAM-INFO
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two. AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbTOSHIBA | MRAM-INFO
Toshiba presented a new STT-MRAM 1-Mb test chip that provides speed performance capable of 3.3-ns access to in-cache memory. The newly developed circuit consumes about 80% less power compared to a conventional SRAM as embedded memory - and Toshiba says that this makes it the best power-performing embedded memory. GLOBALFOUNDRIES AND EVADERIS ARE DEVELOPING AN ULTRA-LOW GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.. The two companies say that this new reference design will bring together the superior reliability and versatility of GF’s 22FDX eMRAM and eVaderis’ ultra-low power IP. COGNIMEM'S COGNITIVE PATTERN RECOGNITION SYSTEMS USE Everspin announced today that CogniMem's CogniBlox product line uses their 4MB MRAM chips. The CogniBlox is a reconfigurable and stackable pattern recognition module that enables a cognitive computingplatform.
TSMC PLANS TO INTRODUCE 16NM EMBEDDED MRAM TSMC plans to introduce 16nm embedded MRAM. TSMC announced, during the company's virtual European technology symposium, that it is developing MRAM technologies for its 16nm FinFET platform. The company expects to offer flash-like configuration risk production starting in 4Q21 and RAM-like risk production scheduled for 4Q22.MRAM COMPANIES
California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64Mb SOT-MRAM | MRAM-INFO Researchers from Seoul's National University and Pohang's University of Science and Technology (POSTECH) report that a 2D iron germanium telluride (Fe 3 GeTe 2, or FGT) layer is an excellent candidate to be used as the basis SOT-MRAM material.. An SOT-MRAM based on FGT is highly energy-efficient, in fact the researchers say that the measured magnitude of SOT per applied currentINTEL | MRAM-INFO
Intel's new STT-MRAM features 20 nm write times, 4 ns read times, an endurance of 1012 cycles and memory retention of one second at 110 degrees. The bit rates are good enough to be handled with error-correcting code (ECC) techniques. To achieve these features, Intel reduced the magnetic junction size to 55 nm (from 70-80 nm it had achieved before). AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbSAMSUNG | MRAM-INFO
Samsung is a large Korean conglomerate focusing on electronics, displays (both LCDs and OLEDs) and semiconductors.Samsung is a leading memory producer and is researching several next-generation memory technologies, including RRAM and MRAM.. Samsung collaborates with several companies on STT-MRAM technologies, including Hynix and IBM.In April 2016 Samsung's semiconductor unitPMTJ | MRAM-INFO
pMTJ STT-MRAM developer Avalanche Technology announced its 2nd-generation serial non-volatile discrete MRAM memory family. The SPnvSRAM family offers 1 Mb to 32 Mb densities at extended-temperature industrial-grade specifications. Avalanche says that these devices, available in low pin count, small package options, are ideal for a broad range of industrial, automotive and consumer applications. SAMSUNG IMPROVES ITS MRAM PERFORMANCE, WILL EXPAND ITS Samsung will now expand the application of its eMRAM solutions to more markets - specifically the automotive, wearable, graphic memory, low level cache, internet of things and edge artificial intelligence markets. Samsung's latest MRAM die is 40% smaller than SRAM. The company's MRAM boasts 30-50 ns read and write speeds, and the companyaims
HYNIX | MRAM-INFO
Toshiba and SK Hynix co-developed a 4-Gbit STT-MRAM chip, and presented a prototype at IEDM 2016. The prototype chip is made from eight 512-Mbit banks, and the cell area is equivalent to that of DRAM - at 9F2, which Hynix says is much smaller than conventional STT COGNIMEM'S COGNITIVE PATTERN RECOGNITION SYSTEMS USE Everspin announced today that CogniMem's CogniBlox product line uses their 4MB MRAM chips. The CogniBlox is a reconfigurable and stackable pattern recognition module that enables a cognitive computingplatform.
GLOBALFOUNDRIES: 22NM EMRAM TECHNOLOGY IS NOW AVAILABLE In September 2016 Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory (as part of the 22FDX platform). Today GlobalFoundries (GF) announced that eMRAM technology is now available for the 22FDX platform. GF says that its eMRAM technology is the industry's most advanced embedded MRAM-INFO | MRAM NEWS, RESOURCES & INFORMATIONABOUT USWHAT IS MRAMSTT-MRAMMRAM COMPANIESCONFERENCESEVADERIS MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies. MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in asingle
MRAM COMPANIES
US-based Despatch Industries, established in 1902, is a specialized thermal-processing equipment maker. Despatch is involved in three markets - thermal, solar and carbon fiber. Despatch also offers equipment for the data storage industry. Despatch installed the world’s first 50-wafer fully automated MRAM system at Freescale, inaddition to a
WHAT IS MRAM?
What is MRAM? MRAM (Magnetic RAM) is a memory technology that uses electron spin to store information (an MRAM device is a Spintronics device). MRAM has the potential to become a universal memory - able to combine the densities of storage memory with the speed of SRAM, all the while being non-volatile and power efficient. SOT-MRAM | MRAM-INFO SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed. Now researchers at the Tokyo Institute of Technology havedeveloped
SPIN MEMORY
Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability andTSMC | MRAM-INFO
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two. AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbTOSHIBA | MRAM-INFO
Toshiba presented a new STT-MRAM 1-Mb test chip that provides speed performance capable of 3.3-ns access to in-cache memory. The newly developed circuit consumes about 80% less power compared to a conventional SRAM as embedded memory - and Toshiba says that this makes it the best power-performing embedded memory. TSMC SHOWS ITS EMRAM TECHNOLOGY ROADMAP TSMC shows its eMRAM technology roadmap. During a presentation during Persistent Memory Summit, a new slide from TSMC was shown that describes the company's eMRAM roadmap: As we already know, TSMC is offering 22nm eMRAM option as an eFlash alternative. The company is also looking to develop 14/12 nm eMRAM option to replace SRAM memory(this is
SAMSUNG IMPROVES ITS MRAM PERFORMANCE, WILL EXPAND ITS Samsung will now expand the application of its eMRAM solutions to more markets - specifically the automotive, wearable, graphic memory, low level cache, internet of things and edge artificial intelligence markets. Samsung's latest MRAM die is 40% smaller than SRAM. The company's MRAM boasts 30-50 ns read and write speeds, and the companyaims
MRAM-INFO | MRAM NEWS, RESOURCES & INFORMATIONABOUT USWHAT IS MRAMSTT-MRAMMRAM COMPANIESCONFERENCESEVADERIS MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies. MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in asingle
MRAM COMPANIES
US-based Despatch Industries, established in 1902, is a specialized thermal-processing equipment maker. Despatch is involved in three markets - thermal, solar and carbon fiber. Despatch also offers equipment for the data storage industry. Despatch installed the world’s first 50-wafer fully automated MRAM system at Freescale, inaddition to a
WHAT IS MRAM?
What is MRAM? MRAM (Magnetic RAM) is a memory technology that uses electron spin to store information (an MRAM device is a Spintronics device). MRAM has the potential to become a universal memory - able to combine the densities of storage memory with the speed of SRAM, all the while being non-volatile and power efficient. SOT-MRAM | MRAM-INFO SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed. Now researchers at the Tokyo Institute of Technology havedeveloped
SPIN MEMORY
Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability andTSMC | MRAM-INFO
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two. AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbTOSHIBA | MRAM-INFO
Toshiba presented a new STT-MRAM 1-Mb test chip that provides speed performance capable of 3.3-ns access to in-cache memory. The newly developed circuit consumes about 80% less power compared to a conventional SRAM as embedded memory - and Toshiba says that this makes it the best power-performing embedded memory. TSMC SHOWS ITS EMRAM TECHNOLOGY ROADMAP TSMC shows its eMRAM technology roadmap. During a presentation during Persistent Memory Summit, a new slide from TSMC was shown that describes the company's eMRAM roadmap: As we already know, TSMC is offering 22nm eMRAM option as an eFlash alternative. The company is also looking to develop 14/12 nm eMRAM option to replace SRAM memory(this is
SAMSUNG IMPROVES ITS MRAM PERFORMANCE, WILL EXPAND ITS Samsung will now expand the application of its eMRAM solutions to more markets - specifically the automotive, wearable, graphic memory, low level cache, internet of things and edge artificial intelligence markets. Samsung's latest MRAM die is 40% smaller than SRAM. The company's MRAM boasts 30-50 ns read and write speeds, and the companyaims
STT-MRAM: INTRODUCTION AND MARKET STATUS STT-MRAM chips. Several companies, including IBM and Samsung, Everspin, Avalanche Technologies, Spin Transfer Technologies and Crocus are developing STT-MRAM chips. In April 2016 Everspin announced that it started shipping 256Mb ST-MRAM samples to customers.The new chips demonstrate interface speeds comparable to DRAM, with DDR3 andDDR4 interfaces.
SAMSUNG | MRAM-INFO
Samsung is a large Korean conglomerate focusing on electronics, displays (both LCDs and OLEDs) and semiconductors.Samsung is a leading memory producer and is researching several next-generation memory technologies, including RRAM and MRAM.. Samsung collaborates with several companies on STT-MRAM technologies, including Hynix and IBM.In April 2016 Samsung's semiconductor unitIMEC | MRAM-INFO
Imec is a Belgium-based nanoelectronics research institute with over 2,000 employees and R&D teams in Belgium, Holland, china, Taiwan and India. One of Imec's research programs is focused on emerging memory technologies. Imec performs STT-MRAM research in collaboration with Tokyo Electron and Canon and have a complete 300-mm STT-MRAM dedicatedINTEL | MRAM-INFO
Intel's new STT-MRAM features 20 nm write times, 4 ns read times, an endurance of 1012 cycles and memory retention of one second at 110 degrees. The bit rates are good enough to be handled with error-correcting code (ECC) techniques. To achieve these features, Intel reduced the magnetic junction size to 55 nm (from 70-80 nm it had achieved before). AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbPMTJ | MRAM-INFO
pMTJ STT-MRAM developer Avalanche Technology announced its 2nd-generation serial non-volatile discrete MRAM memory family. The SPnvSRAM family offers 1 Mb to 32 Mb densities at extended-temperature industrial-grade specifications. Avalanche says that these devices, available in low pin count, small package options, are ideal for a broad range of industrial, automotive and consumer applications.HYNIX | MRAM-INFO
Toshiba and SK Hynix co-developed a 4-Gbit STT-MRAM chip, and presented a prototype at IEDM 2016. The prototype chip is made from eight 512-Mbit banks, and the cell area is equivalent to that of DRAM - at 9F2, which Hynix says is much smaller than conventional STT SAMSUNG IMPROVES ITS MRAM PERFORMANCE, WILL EXPAND ITS Samsung will now expand the application of its eMRAM solutions to more markets - specifically the automotive, wearable, graphic memory, low level cache, internet of things and edge artificial intelligence markets. Samsung's latest MRAM die is 40% smaller than SRAM. The company's MRAM boasts 30-50 ns read and write speeds, and the companyaims
COGNIMEM'S COGNITIVE PATTERN RECOGNITION SYSTEMS USE Everspin announced today that CogniMem's CogniBlox product line uses their 4MB MRAM chips. The CogniBlox is a reconfigurable and stackable pattern recognition module that enables a cognitive computingplatform.
MAGNETIC SOLUTIONS SELECTED FOR MRAM HIGH FIELD ANNEALING Magnetic Solutions today announced that it has accepted an order for an MRT2000 high field annealing oven for MRAM development and production. The order was placed by an international semiconductor company, that is a new entrant into the MRAM space. The order was the result of a competitive evaluation between existing magnetic annealingtool
MRAM-INFO | MRAM NEWS, RESOURCES & INFORMATIONABOUT USWHAT IS MRAMSTT-MRAMMRAM COMPANIESCONFERENCESEVADERIS MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies. MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in asingle
MRAM COMPANIES
US-based Despatch Industries, established in 1902, is a specialized thermal-processing equipment maker. Despatch is involved in three markets - thermal, solar and carbon fiber. Despatch also offers equipment for the data storage industry. Despatch installed the world’s first 50-wafer fully automated MRAM system at Freescale, inaddition to a
MRAM HISTORY
1989 - IBM scientists made a string of key discoveries about the "giant magnetoresistive" effect in thin-film structures. 2000 - IBM and Infineon established a joint MRAM development program. 2002 - NVE Announces Technology Exchange with Cypress Semiconductor. 2003 - A 128Kbit MRAM chip was introduced, manufactured with 0.18 technology.WHAT IS MRAM?
What is MRAM? MRAM (Magnetic RAM) is a memory technology that uses electron spin to store information (an MRAM device is a Spintronics device). MRAM has the potential to become a universal memory - able to combine the densities of storage memory with the speed of SRAM, all the while being non-volatile and power efficient. SOT-MRAM | MRAM-INFO SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed. Now researchers at the Tokyo Institute of Technology havedeveloped
SPIN MEMORY
Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability andTSMC | MRAM-INFO
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two. AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbTOSHIBA | MRAM-INFO
Toshiba presented a new STT-MRAM 1-Mb test chip that provides speed performance capable of 3.3-ns access to in-cache memory. The newly developed circuit consumes about 80% less power compared to a conventional SRAM as embedded memory - and Toshiba says that this makes it the best power-performing embedded memory. TSMC SHOWS ITS EMRAM TECHNOLOGY ROADMAP TSMC shows its eMRAM technology roadmap. During a presentation during Persistent Memory Summit, a new slide from TSMC was shown that describes the company's eMRAM roadmap: As we already know, TSMC is offering 22nm eMRAM option as an eFlash alternative. The company is also looking to develop 14/12 nm eMRAM option to replace SRAM memory(this is
MRAM-INFO | MRAM NEWS, RESOURCES & INFORMATIONABOUT USWHAT IS MRAMSTT-MRAMMRAM COMPANIESCONFERENCESEVADERIS MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies. MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in asingle
MRAM COMPANIES
US-based Despatch Industries, established in 1902, is a specialized thermal-processing equipment maker. Despatch is involved in three markets - thermal, solar and carbon fiber. Despatch also offers equipment for the data storage industry. Despatch installed the world’s first 50-wafer fully automated MRAM system at Freescale, inaddition to a
MRAM HISTORY
1989 - IBM scientists made a string of key discoveries about the "giant magnetoresistive" effect in thin-film structures. 2000 - IBM and Infineon established a joint MRAM development program. 2002 - NVE Announces Technology Exchange with Cypress Semiconductor. 2003 - A 128Kbit MRAM chip was introduced, manufactured with 0.18 technology.WHAT IS MRAM?
What is MRAM? MRAM (Magnetic RAM) is a memory technology that uses electron spin to store information (an MRAM device is a Spintronics device). MRAM has the potential to become a universal memory - able to combine the densities of storage memory with the speed of SRAM, all the while being non-volatile and power efficient. SOT-MRAM | MRAM-INFO SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed. Now researchers at the Tokyo Institute of Technology havedeveloped
SPIN MEMORY
Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability andTSMC | MRAM-INFO
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two. AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbTOSHIBA | MRAM-INFO
Toshiba presented a new STT-MRAM 1-Mb test chip that provides speed performance capable of 3.3-ns access to in-cache memory. The newly developed circuit consumes about 80% less power compared to a conventional SRAM as embedded memory - and Toshiba says that this makes it the best power-performing embedded memory. TSMC SHOWS ITS EMRAM TECHNOLOGY ROADMAP TSMC shows its eMRAM technology roadmap. During a presentation during Persistent Memory Summit, a new slide from TSMC was shown that describes the company's eMRAM roadmap: As we already know, TSMC is offering 22nm eMRAM option as an eFlash alternative. The company is also looking to develop 14/12 nm eMRAM option to replace SRAM memory(this is
STT-MRAM: INTRODUCTION AND MARKET STATUS STT-MRAM chips. Several companies, including IBM and Samsung, Everspin, Avalanche Technologies, Spin Transfer Technologies and Crocus are developing STT-MRAM chips. In April 2016 Everspin announced that it started shipping 256Mb ST-MRAM samples to customers.The new chips demonstrate interface speeds comparable to DRAM, with DDR3 andDDR4 interfaces.
IMEC | MRAM-INFO
Imec is a Belgium-based nanoelectronics research institute with over 2,000 employees and R&D teams in Belgium, Holland, china, Taiwan and India. One of Imec's research programs is focused on emerging memory technologies. Imec performs STT-MRAM research in collaboration with Tokyo Electron and Canon and have a complete 300-mm STT-MRAM dedicatedINTEL | MRAM-INFO
Intel's new STT-MRAM features 20 nm write times, 4 ns read times, an endurance of 1012 cycles and memory retention of one second at 110 degrees. The bit rates are good enough to be handled with error-correcting code (ECC) techniques. To achieve these features, Intel reduced the magnetic junction size to 55 nm (from 70-80 nm it had achieved before).SAMSUNG | MRAM-INFO
Samsung is a large Korean conglomerate focusing on electronics, displays (both LCDs and OLEDs) and semiconductors.Samsung is a leading memory producer and is researching several next-generation memory technologies, including RRAM and MRAM.. Samsung collaborates with several companies on STT-MRAM technologies, including Hynix and IBM.In April 2016 Samsung's semiconductor unit AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbMRAM MEMORY MAKERS
California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.PMTJ | MRAM-INFO
pMTJ STT-MRAM developer Avalanche Technology announced its 2nd-generation serial non-volatile discrete MRAM memory family. The SPnvSRAM family offers 1 Mb to 32 Mb densities at extended-temperature industrial-grade specifications. Avalanche says that these devices, available in low pin count, small package options, are ideal for a broad range of industrial, automotive and consumer applications. SAMSUNG IMPROVES ITS MRAM PERFORMANCE, WILL EXPAND ITS Samsung will now expand the application of its eMRAM solutions to more markets - specifically the automotive, wearable, graphic memory, low level cache, internet of things and edge artificial intelligence markets. Samsung's latest MRAM die is 40% smaller than SRAM. The company's MRAM boasts 30-50 ns read and write speeds, and the companyaims
COGNIMEM'S COGNITIVE PATTERN RECOGNITION SYSTEMS USE Everspin announced today that CogniMem's CogniBlox product line uses their 4MB MRAM chips. The CogniBlox is a reconfigurable and stackable pattern recognition module that enables a cognitive computingplatform.
MAGNETIC SOLUTIONS SELECTED FOR MRAM HIGH FIELD ANNEALING Magnetic Solutions today announced that it has accepted an order for an MRT2000 high field annealing oven for MRAM development and production. The order was placed by an international semiconductor company, that is a new entrant into the MRAM space. The order was the result of a competitive evaluation between existing magnetic annealingtool
MRAM HISTORY
1989 - IBM scientists made a string of key discoveries about the "giant magnetoresistive" effect in thin-film structures. 2000 - IBM and Infineon established a joint MRAM development program. 2002 - NVE Announces Technology Exchange with Cypress Semiconductor. 2003 - A 128Kbit MRAM chip was introduced, manufactured with 0.18 technology. SOT-MRAM | MRAM-INFO SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed. Now researchers at the Tokyo Institute of Technology havedeveloped
SPIN MEMORY
Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability andTSMC | MRAM-INFO
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two.INTEL | MRAM-INFO
Intel's new STT-MRAM features 20 nm write times, 4 ns read times, an endurance of 1012 cycles and memory retention of one second at 110 degrees. The bit rates are good enough to be handled with error-correcting code (ECC) techniques. To achieve these features, Intel reduced the magnetic junction size to 55 nm (from 70-80 nm it had achieved before).MRAM MEMORY MAKERS
California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.NUMEM | MRAM-INFO
Numem. Numem (previously NVMEngines) is a US-based early stage company that develops high-performance, low-power embedded STT-MRAM IP cores for the IoT, micro-controller and automotive markets. Numem says its memory enables a 2-3x smaller memory area and 20x to 50x lower standby power compared to SRAM. The company also develops design GLOBALFOUNDRIES AND EVADERIS ARE DEVELOPING AN ULTRA-LOW GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.. The two companies say that this new reference design will bring together the superior reliability and versatility of GF’s 22FDX eMRAM and eVaderis’ ultra-low power IP. TSMC PLANS TO INTRODUCE 16NM EMBEDDED MRAM TSMC plans to introduce 16nm embedded MRAM. TSMC announced, during the company's virtual European technology symposium, that it is developing MRAM technologies for its 16nm FinFET platform. The company expects to offer flash-like configuration risk production starting in 4Q21 and RAM-like risk production scheduled for 4Q22. COGNIMEM'S COGNITIVE PATTERN RECOGNITION SYSTEMS USE Everspin announced today that CogniMem's CogniBlox product line uses their 4MB MRAM chips. The CogniBlox is a reconfigurable and stackable pattern recognition module that enables a cognitive computingplatform.
MRAM HISTORY
1989 - IBM scientists made a string of key discoveries about the "giant magnetoresistive" effect in thin-film structures. 2000 - IBM and Infineon established a joint MRAM development program. 2002 - NVE Announces Technology Exchange with Cypress Semiconductor. 2003 - A 128Kbit MRAM chip was introduced, manufactured with 0.18 technology. SOT-MRAM | MRAM-INFO SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed. Now researchers at the Tokyo Institute of Technology havedeveloped
SPIN MEMORY
Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability andTSMC | MRAM-INFO
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two.INTEL | MRAM-INFO
Intel's new STT-MRAM features 20 nm write times, 4 ns read times, an endurance of 1012 cycles and memory retention of one second at 110 degrees. The bit rates are good enough to be handled with error-correcting code (ECC) techniques. To achieve these features, Intel reduced the magnetic junction size to 55 nm (from 70-80 nm it had achieved before).MRAM MEMORY MAKERS
California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.NUMEM | MRAM-INFO
Numem. Numem (previously NVMEngines) is a US-based early stage company that develops high-performance, low-power embedded STT-MRAM IP cores for the IoT, micro-controller and automotive markets. Numem says its memory enables a 2-3x smaller memory area and 20x to 50x lower standby power compared to SRAM. The company also develops design GLOBALFOUNDRIES AND EVADERIS ARE DEVELOPING AN ULTRA-LOW GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.. The two companies say that this new reference design will bring together the superior reliability and versatility of GF’s 22FDX eMRAM and eVaderis’ ultra-low power IP. TSMC PLANS TO INTRODUCE 16NM EMBEDDED MRAM TSMC plans to introduce 16nm embedded MRAM. TSMC announced, during the company's virtual European technology symposium, that it is developing MRAM technologies for its 16nm FinFET platform. The company expects to offer flash-like configuration risk production starting in 4Q21 and RAM-like risk production scheduled for 4Q22. COGNIMEM'S COGNITIVE PATTERN RECOGNITION SYSTEMS USE Everspin announced today that CogniMem's CogniBlox product line uses their 4MB MRAM chips. The CogniBlox is a reconfigurable and stackable pattern recognition module that enables a cognitive computingplatform.
MRAM COMPANIES
US-based Despatch Industries, established in 1902, is a specialized thermal-processing equipment maker. Despatch is involved in three markets - thermal, solar and carbon fiber. Despatch also offers equipment for the data storage industry. Despatch installed the world’s first 50-wafer fully automated MRAM system at Freescale, inaddition to a
AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbINTEL | MRAM-INFO
Intel's new STT-MRAM features 20 nm write times, 4 ns read times, an endurance of 1012 cycles and memory retention of one second at 110 degrees. The bit rates are good enough to be handled with error-correcting code (ECC) techniques. To achieve these features, Intel reduced the magnetic junction size to 55 nm (from 70-80 nm it had achieved before).SAMSUNG | MRAM-INFO
Samsung is a large Korean conglomerate focusing on electronics, displays (both LCDs and OLEDs) and semiconductors.Samsung is a leading memory producer and is researching several next-generation memory technologies, including RRAM and MRAM.. Samsung collaborates with several companies on STT-MRAM technologies, including Hynix and IBM.In April 2016 Samsung's semiconductor unitTOSHIBA | MRAM-INFO
Toshiba presented a new STT-MRAM 1-Mb test chip that provides speed performance capable of 3.3-ns access to in-cache memory. The newly developed circuit consumes about 80% less power compared to a conventional SRAM as embedded memory - and Toshiba says that this makes it the best power-performing embedded memory. INTEGRAL SOLUTIONS INT’L (ISI) Integral Solutions Int’l (ISI) is a privately held US-based company that supplies Quasi Static Testers for characterizing Magneto-Resistive type heads. ISI's product suite includes QST testers for every stage of manufacturing. ISI says that about 85% of the entire head production for the HDD industry is being tested on ISI'sequipment.
PMTJ | MRAM-INFO
pMTJ STT-MRAM developer Avalanche Technology announced its 2nd-generation serial non-volatile discrete MRAM memory family. The SPnvSRAM family offers 1 Mb to 32 Mb densities at extended-temperature industrial-grade specifications. Avalanche says that these devices, available in low pin count, small package options, are ideal for a broad range of industrial, automotive and consumer applications.HYNIX | MRAM-INFO
Toshiba and SK Hynix co-developed a 4-Gbit STT-MRAM chip, and presented a prototype at IEDM 2016. The prototype chip is made from eight 512-Mbit banks, and the cell area is equivalent to that of DRAM - at 9F2, which Hynix says is much smaller than conventional STT COGNIMEM'S COGNITIVE PATTERN RECOGNITION SYSTEMS USE Everspin announced today that CogniMem's CogniBlox product line uses their 4MB MRAM chips. The CogniBlox is a reconfigurable and stackable pattern recognition module that enables a cognitive computingplatform.
GLOBALFOUNDRIES: 22NM EMRAM TECHNOLOGY IS NOW AVAILABLE In September 2016 Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory (as part of the 22FDX platform). Today GlobalFoundries (GF) announced that eMRAM technology is now available for the 22FDX platform. GF says that its eMRAM technology is the industry's most advanced embedded MRAM-INFO | MRAM NEWS, RESOURCES & INFORMATIONABOUT USWHAT IS MRAMSTT-MRAMMRAM COMPANIESCONFERENCESEVADERIS MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies. MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in asingle
MRAM COMPANIES
US-based Despatch Industries, established in 1902, is a specialized thermal-processing equipment maker. Despatch is involved in three markets - thermal, solar and carbon fiber. Despatch also offers equipment for the data storage industry. Despatch installed the world’s first 50-wafer fully automated MRAM system at Freescale, inaddition to a
MRAM HISTORY
1989 - IBM scientists made a string of key discoveries about the "giant magnetoresistive" effect in thin-film structures. 2000 - IBM and Infineon established a joint MRAM development program. 2002 - NVE Announces Technology Exchange with Cypress Semiconductor. 2003 - A 128Kbit MRAM chip was introduced, manufactured with 0.18 technology. SOT-MRAM | MRAM-INFO SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed. Now researchers at the Tokyo Institute of Technology havedeveloped
SPIN MEMORY
Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability and AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbTSMC | MRAM-INFO
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two.RAMBUS | MRAM-INFO
Rambus. US-based Rambus was established in 1990 as a technology licensing company, famous for its IP on DDR-SDRAM memory. Besides memory systems, the company is also developing security solutions, mobile media integration platforms, LED lighting products and more. In August 2013 it was reported that Rambus is also developing MRAMtechnologies.
TOSHIBA | MRAM-INFO
Toshiba presented a new STT-MRAM 1-Mb test chip that provides speed performance capable of 3.3-ns access to in-cache memory. The newly developed circuit consumes about 80% less power compared to a conventional SRAM as embedded memory - and Toshiba says that this makes it the best power-performing embedded memory. GLOBALFOUNDRIES AND EVADERIS ARE DEVELOPING AN ULTRA-LOW GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.. The two companies say that this new reference design will bring together the superior reliability and versatility of GF’s 22FDX eMRAM and eVaderis’ ultra-low power IP. MRAM-INFO | MRAM NEWS, RESOURCES & INFORMATIONABOUT USWHAT IS MRAMSTT-MRAMMRAM COMPANIESCONFERENCESEVADERIS MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies. MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in asingle
MRAM COMPANIES
US-based Despatch Industries, established in 1902, is a specialized thermal-processing equipment maker. Despatch is involved in three markets - thermal, solar and carbon fiber. Despatch also offers equipment for the data storage industry. Despatch installed the world’s first 50-wafer fully automated MRAM system at Freescale, inaddition to a
MRAM HISTORY
1989 - IBM scientists made a string of key discoveries about the "giant magnetoresistive" effect in thin-film structures. 2000 - IBM and Infineon established a joint MRAM development program. 2002 - NVE Announces Technology Exchange with Cypress Semiconductor. 2003 - A 128Kbit MRAM chip was introduced, manufactured with 0.18 technology. SOT-MRAM | MRAM-INFO SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed. Now researchers at the Tokyo Institute of Technology havedeveloped
SPIN MEMORY
Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability and AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbTSMC | MRAM-INFO
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two.RAMBUS | MRAM-INFO
Rambus. US-based Rambus was established in 1990 as a technology licensing company, famous for its IP on DDR-SDRAM memory. Besides memory systems, the company is also developing security solutions, mobile media integration platforms, LED lighting products and more. In August 2013 it was reported that Rambus is also developing MRAMtechnologies.
TOSHIBA | MRAM-INFO
Toshiba presented a new STT-MRAM 1-Mb test chip that provides speed performance capable of 3.3-ns access to in-cache memory. The newly developed circuit consumes about 80% less power compared to a conventional SRAM as embedded memory - and Toshiba says that this makes it the best power-performing embedded memory. GLOBALFOUNDRIES AND EVADERIS ARE DEVELOPING AN ULTRA-LOW GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.. The two companies say that this new reference design will bring together the superior reliability and versatility of GF’s 22FDX eMRAM and eVaderis’ ultra-low power IP. MRAM-INFO | MRAM NEWS, RESOURCES & INFORMATION MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies. MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in asingle
INVESTMENT | MRAM-INFO Everspin Technologies announced its preliminary Q4 2020 financial results. Total revenues were $10 million, down from $10.1 million in Q3 and up from $9.7 million in Q4 2019. Net loss int he quarter was $1.6 million, but the company generated $0.6 million in cash flow - Everspin's second consecutive positive cash flow from operations quarter. Looking at FY2020, Everspin's revenues increased 12IMEC | MRAM-INFO
Imec is a Belgium-based nanoelectronics research institute with over 2,000 employees and R&D teams in Belgium, Holland, china, Taiwan and India. One of Imec's research programs is focused on emerging memory technologies. Imec performs STT-MRAM research in collaboration with Tokyo Electron and Canon and have a complete 300-mm STT-MRAM dedicated TSMC SHOWS ITS EMRAM TECHNOLOGY ROADMAP TSMC shows its eMRAM technology roadmap. During a presentation during Persistent Memory Summit, a new slide from TSMC was shown that describes the company's eMRAM roadmap: As we already know, TSMC is offering 22nm eMRAM option as an eFlash alternative. The company is also looking to develop 14/12 nm eMRAM option to replace SRAM memory(this is
INTEL | MRAM-INFO
Intel's new STT-MRAM features 20 nm write times, 4 ns read times, an endurance of 1012 cycles and memory retention of one second at 110 degrees. The bit rates are good enough to be handled with error-correcting code (ECC) techniques. To achieve these features, Intel reduced the magnetic junction size to 55 nm (from 70-80 nm it had achieved before).GLOBALFOUNDRIES
GlobalFoundries has plans to deploy Everspin's perpendicular (pMTJ) STT-MRAM as an embedded 22nm memory - as part of GF's 22FDX platform. GlobalFoundries has released a technical paper that details the eMRAM ability to retain data at high temperatures. The eMRAM can retain data through solder reflow at 260 degrees Celsius, and for more than 10 years at 125 degrees Celsius, plus read/write with TSMC PLANS TO INTRODUCE 16NM EMBEDDED MRAM TSMC plans to introduce 16nm embedded MRAM. TSMC announced, during the company's virtual European technology symposium, that it is developing MRAM technologies for its 16nm FinFET platform. The company expects to offer flash-like configuration risk production starting in 4Q21 and RAM-like risk production scheduled for 4Q22. COGNIMEM'S COGNITIVE PATTERN RECOGNITION SYSTEMS USE Everspin announced today that CogniMem's CogniBlox product line uses their 4MB MRAM chips. The CogniBlox is a reconfigurable and stackable pattern recognition module that enables a cognitive computingplatform.
MAGNETIC SOLUTIONS SELECTED FOR MRAM HIGH FIELD ANNEALING Magnetic Solutions today announced that it has accepted an order for an MRT2000 high field annealing oven for MRAM development and production. The order was placed by an international semiconductor company, that is a new entrant into the MRAM space. The order was the result of a competitive evaluation between existing magnetic annealingtool
FLASH MEMORY SUMMIT 2018 Where: Santa Clara Convention Center, Santa Clara, CA, USA. The 12th annual Flash Memory Summit is the largest global event on memory technology. Flash Memory Summit is a three day event that includes seminars, forums, keynotes and sessions. In 2018 the event will be preceded by the First Annual MRAM (Application) Developer Day (August6).
MRAM-INFO | MRAM NEWS, RESOURCES & INFORMATIONABOUT USWHAT IS MRAMSTT-MRAMMRAM COMPANIESCONFERENCESEVADERIS MRAM-Info: the MRAM experts. MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies. MRAM is a next-generation memory technology, based on electron spin ratherthen its charge.
MRAM COMPANIES
California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbMRAM HISTORY
The early years. 1989 - IBM scientists made a string of key discoveries about the "giant magnetoresistive" effect in thin-film structures. 2000 - IBM and Infineon established a joint MRAM development program. SOT-MRAM | MRAM-INFOSTT MRAM AESSTT MRAM PDF Researchers from Seoul's National University and Pohang's University of Science and Technology (POSTECH) report that a 2D iron germanium telluride (Fe 3 GeTe 2, or FGT) layer is an excellent candidate to be used as the basis SOT-MRAM material.. An SOT-MRAM based on FGT is highly energy-efficient, in fact the researchers say that the measured magnitude of SOT per applied currentSPIN MEMORY
Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability and AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64Mb TSMC | MRAM-INFOSTT MRAMTSMC 22NM ULLTSMC 28NM PDKTSMC RERAMMRAMTECHNOLOGYUMC MRAM
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two.RAMBUS | MRAM-INFO
US-based Rambus was established in 1990 as a technology licensing company, famous for its IP on DDR-SDRAM memory. Besides memory systems, the company is also developing security solutions, mobile media integration platforms, LED lighting products and more. GLOBALFOUNDRIES AND EVADERIS ARE DEVELOPING AN ULTRA-LOW GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.. The two companies say that this new reference design will bring together the superior reliability and versatility of GF’s 22FDX eMRAM and eVaderis’ ultra-low power IP. COGNIMEM'S COGNITIVE PATTERN RECOGNITION SYSTEMS USE Everspin announced today that CogniMem's CogniBlox product line uses their 4MB MRAM chips. The CogniBlox is a reconfigurable and stackable pattern recognition module that enables a cognitive computingplatform.
MRAM-INFO | MRAM NEWS, RESOURCES & INFORMATIONABOUT USWHAT IS MRAMSTT-MRAMMRAM COMPANIESCONFERENCESEVADERIS MRAM-Info: the MRAM experts. MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies. MRAM is a next-generation memory technology, based on electron spin ratherthen its charge.
MRAM COMPANIES
California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64MbMRAM HISTORY
The early years. 1989 - IBM scientists made a string of key discoveries about the "giant magnetoresistive" effect in thin-film structures. 2000 - IBM and Infineon established a joint MRAM development program. SOT-MRAM | MRAM-INFOSTT MRAM AESSTT MRAM PDF Researchers from Seoul's National University and Pohang's University of Science and Technology (POSTECH) report that a 2D iron germanium telluride (Fe 3 GeTe 2, or FGT) layer is an excellent candidate to be used as the basis SOT-MRAM material.. An SOT-MRAM based on FGT is highly energy-efficient, in fact the researchers say that the measured magnitude of SOT per applied currentSPIN MEMORY
Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability and AVALANCHE TECHNOLOGY California-based Avalanche Technology is a start up company founded in 2006 to develop patented Spin Programmable perpendicular STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology that enables lower write current, smaller cell size, higher density and excellent scalability.. Avalanche Technology currently offers STT-MRAM chips up to 64Mb TSMC | MRAM-INFOSTT MRAMTSMC 22NM ULLTSMC 28NM PDKTSMC RERAMMRAMTECHNOLOGYUMC MRAM
TSMC claims to have developed novel MRAM structures based on a 0.18-micron process and a pillar write word line (PWWL) cell. The company proposes to shrink the bit size by a "so-called ExtVia process" while reducing the writing current by a factor of two.RAMBUS | MRAM-INFO
US-based Rambus was established in 1990 as a technology licensing company, famous for its IP on DDR-SDRAM memory. Besides memory systems, the company is also developing security solutions, mobile media integration platforms, LED lighting products and more. GLOBALFOUNDRIES AND EVADERIS ARE DEVELOPING AN ULTRA-LOW GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.. The two companies say that this new reference design will bring together the superior reliability and versatility of GF’s 22FDX eMRAM and eVaderis’ ultra-low power IP. COGNIMEM'S COGNITIVE PATTERN RECOGNITION SYSTEMS USE Everspin announced today that CogniMem's CogniBlox product line uses their 4MB MRAM chips. The CogniBlox is a reconfigurable and stackable pattern recognition module that enables a cognitive computingplatform.
MRAM-INFO | MRAM NEWS, RESOURCES & INFORMATION MRAM-Info: the MRAM experts. MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies. MRAM is a next-generation memory technology, based on electron spin ratherthen its charge.
SOT-MRAM | MRAM-INFO Researchers from Seoul's National University and Pohang's University of Science and Technology (POSTECH) report that a 2D iron germanium telluride (Fe 3 GeTe 2, or FGT) layer is an excellent candidate to be used as the basis SOT-MRAM material.. An SOT-MRAM based on FGT is highly energy-efficient, in fact the researchers say that the measured magnitude of SOT per applied current INVESTMENT | MRAM-INFO Everspin Technologies announced its preliminary Q4 2020 financial results. Total revenues were $10 million, down from $10.1 million in Q3 and up from $9.7 million in Q4 2019. Net loss int he quarter was $1.6 million, but the company generated $0.6 million in cash flow - Everspin's second consecutive positive cash flow from operations quarter. Looking at FY2020, Everspin's revenues increased 12IMEC | MRAM-INFO
Imec is a Belgium-based nanoelectronics research institute with over 2,000 employees and R&D teams in Belgium, Holland, china, Taiwan andIndia.
INTEL | MRAM-INFO
Intel is the world largest chip maker, and also manufactures networking, memory and communications products. Intel is researching several next-generation memory technologies including MRAM memory, although it currently seems focused on its 3D XPoint memory. TSMC SHOWS ITS EMRAM TECHNOLOGY ROADMAP TSMC shows its eMRAM technology roadmap; Samsung improves its MRAM performance, will expand its target applications; Hprobe announces a significant order for MRAM testing equipment from a tier-1 semiconductor manfacturorGRANDIS | MRAM-INFO
US-based Grandis was established in 2002 to develop STT-MRAM technologies.. Grandis collaborated with Renesas and Hynix, and was acquired by Samsung in 2011 (in what was considered a very successful exit for its investors). Grandis raised $15 million since it was founded in 2002, and also raised about the same from DARPA grants including a $8.6 million second-phase project granted in June 2010.GLOBALFOUNDRIES
GlobalFoundries has plans to deploy Everspin's perpendicular (pMTJ) STT-MRAM as an embedded 22nm memory - as part of GF's 22FDX platform. GlobalFoundries has released a technical paper that details the eMRAM ability to retain data at high temperatures. The eMRAM can retain data through solder reflow at 260 degrees Celsius, and for more than 10 years at 125 degrees Celsius, plus read/write with TSMC PLANS TO INTRODUCE 16NM EMBEDDED MRAM TSMC shows its eMRAM technology roadmap; Everspin reports its financial results for Q1 2021; Samsung improves its MRAM performance, will expand its target applications MAGNETIC SOLUTIONS SELECTED FOR MRAM HIGH FIELD ANNEALING Magnetic Solutions today announced that it has accepted an order for an MRT2000 high field annealing oven for MRAM development andproduction.
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MRAM-INFO: THE MRAM EXPERTS MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies. MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.Recent MRAM News
EVERSPIN REPORTS ITS Q4 2019 FINANCIAL RESULTS Everspin Technologiesannounced its
Q4 2019 financial results, with revenues of $9.8 million (up 5% from Q3 2019) and a net loss of $3.1 million, down from a net loss of $3.7million in Q3 2019.
In 2019, Everspin reports revenues of $37.5 million and a net loss of $14.7 million, down from $17.8 million in 2018.Read the full story
Posted: Mar 13, 2020 EVERSPIN AND GLOBALFOUNDRIES EXTEND THEIR MRAM AGREEMENT TO 12 NMPROCESSES
Everspin Technologiesannounced that
it has amended its STT-MRAM joint development agreement (JDA) with GLOBALFOUNDRIES to set the terms for a future project on an advanced 12 nm FinFET MRAM solution. Everspin agreement included 40 nm, 28 nm and 22 nm processes, and now also include 12 nm. GF recently announced it has achieved initial production of embedded MRAM (eMRAM) on its 22FDX platform.Read the full story
Posted: Mar 12, 2020 GLOBALFOUNDRIES STARTS PRODUCING EMRAM SOLUTIONS, FIRST CUSTOMER TAPE-OUTS BY THE END OF 2020 GlobalFoundries announced that it has delivered the first production-ready eMRAM on its 22FDX platform for IoT and automotive applications. The company says that its advanced eMRAM provides a "cost-effective solution for low-power, non-volatile code and data storage applications". GF says that it has entered production and is working with several clients with multiple production tape-outs scheduled in 2020. GF's eMRAM is designed as a replacement for high-volume embedded NOR flash (eFLASH). GF says that its eMRAM has passed five rigorous real-world solder reflow tests, and has demonstrated 100,000-cycle endurance and 10-year data retention across the -40°C to 125°C temperature range. The FDX eMRAM solution supports AEC-Q100 quality grade 2 designs, with development in process to support an AEC-Q100 quality grade 1 solutionnext year.
Read the full story
Posted: Feb 29, 2020 RESEARCHERS SHOW HOW ANTIFERROMAGNETIC STT-MRAM TECHNOLOGY CAN ENABLE HIGHER-DENSITY AND LOWER ENERGY MEMORY Researchers from Northwestern University suggest building STT-MRAM devices from antiferromagnetic materials - as opposed to the currently-used ferromagnetic ones. The researchers say that these materials will enable higher-density devices that feature high speed writing with low currents. Antiferromagnetic materials are magnetically ordered at the microscopic scale, but not at the macroscopic scale. This means that there is no magnetic force between adjacent bits in MRAM cells built from these materials - which means you can pack them very closetogether.
Read the full story
Posted: Feb 21, 2020 RESEARCHERS DEMONSTRATE THAT CHALCOGENIDE MATERIALS CAN BE HIGHLY SUITABLE FOR SOT-MRAM Researchers from National Taiwan University demonstrate that chalcogenide material BiTe with non-epitaxial structure can give rise to a giant spin Hall ratio and SOT efficiency (~ 200%) without obvious evidence of topologically-protected surface state (TSS). The researchers explain that a clear thickness-dependent increase of the SOT efficiency indicates that the origin of this effect is from the bulk spin-orbit interaction of such materials system. Efficient current-induced switching through SOT is also demonstrated with a low zero-thermal critical switching current density (~ 6×105 A/cm2).Read the full story
Posted: Feb 18, 2020 RESEARCHERS IDENTIFY THE SEMIMETAL MOTE2 AS A PROMISING MRAM MATERIAL Researchers from the National University of Singapore (NUS) have identified a promising spintronicscandidate
material - few-layer thin semimetal molybdenum ditelluride (MoTe2). When thinned to a few layer thickness, the MoTe2 features excellent Spin Hall Effect properties. The team now aims to incorporate MoTe2 into functional devices - suchas MRAM devices .
Read the full story
Posted: Feb 06, 2020 HPROBE RAISES OVER 2 MILLION EUROS TO SUPPORT ITS MRAM DEVICE TESTING EQUIPMENT DEVELOPMENT Hprobe , a developer of testing equipment for magnetic devices, has raised more than 2 million euros from a group of international investors. The new funds will support Hprobe's spintronics device testing development - which include MRAMand TMR sensors.
The investment round was led by Germany-based High-Tech Gründerfonds (HTGF), a public-private venture capital investment firm. Other investors include Taiwan ITRI's ITIC VC firm and TEL Venture Capital.Read the full story
Posted: Feb 06, 2020PAGES
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* Nanounity and MSI received an STT-RAM probe tester order from a leading equipment maker * Gyrfalcon's new AI chip first to use TSMC's embedded MRAM * NVE sues Everspin over 3 MRAM patents * Crocus and Grandis present their MRAM tech at the Flash MemorySummit 2009
* Tamper-resistant dual 8051 multi-controller mates with freescale 4- Mbit (256K x 16) MRAMs * GlobalFoundries starts producing eMRAM solutions, first customer tape-outs by the end of 2020 * Researchers show how antiferromagnetic STT-MRAM technology can enable higher-density and lower energy memory * Hprobe raises over 2 million Euros to support its MRAM device testing equipment development * Researchers demonstrate that chalcogenide materials can be highly suitable for SOT-MRAM * Researchers identify the semimetal MoTe2 as a promising MRAMmaterial
* Everspin announced a restructuring plan to reduced expense and achieve breakeven in 2020 * The best of 2019 - top MRAM stories * Are you an MRAM-related company? * New super-lattice SL-STT-MRAM enable faster and more efficientmemory architecture
* New USMR MRAM structure promises extremly simple design 2004-2020 Metalgrass LTD | Privacy Policy | contact usGet our free
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