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INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
INTERNATIONAL RECTIFIER Rad Hard High and Low Side 400V MOSFET and IGBT Gate Driver. The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) INTERNATIONAL RECTIFIER AHF2805S. 12W Total Output Power 28 Vin +5 Vout Single DC-DC Standard Converter in an AHF Package. DLA Number 5962-91600. Active 60V, P CHANNEL 0.5) R7 TECHNOLOGY 8 2020-11-09 IRHLNJ797034 JANSR2N7624U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 RADIATION HARDENED JANSR2N7520U3C POWER MOSFET 60V, … www.irf.com 3 Pre-Irradiation IRHNJ597034, JANSR2N7520U3 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter 1100K Rads(Si) INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. INTERNATIONAL RECTIFIER IRHLNA797064. 60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 Surface Mount package. Active INTERNATIONAL RECTIFIER Higher performance & efficiencies with low risk design reuse. IR HiRel’s R9 superjunction technology platform offers notable size, weight and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known silicon gate drive setup. A simple drop-in, R9 enables a high degreeof
INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
INTERNATIONAL RECTIFIER Rad Hard High and Low Side 400V MOSFET and IGBT Gate Driver. The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) INTERNATIONAL RECTIFIER AHF2805S. 12W Total Output Power 28 Vin +5 Vout Single DC-DC Standard Converter in an AHF Package. DLA Number 5962-91600. Active 60V, P CHANNEL 0.5) R7 TECHNOLOGY 8 2020-11-09 IRHLNJ797034 JANSR2N7624U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 RADIATION HARDENED JANSR2N7520U3C POWER MOSFET 60V, … www.irf.com 3 Pre-Irradiation IRHNJ597034, JANSR2N7520U3 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter 1100K Rads(Si)IR PACKAGES
Locate a Distributor. Contact Us. Easily find updated package data for all of our products. So whether you are reviewing a previously scanned datasheet or you simply need access to our library of packaging information; we recommend that you please use the links below. INTERNATIONAL RECTIFIER IRHM57160. 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package. Active INTERNATIONAL RECTIFIER 100V 100kRad Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. - IRHNJ9A7130 | 100V 100kRad Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. INTERNATIONAL RECTIFIER IRHNJ597130-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package. Active INTERNATIONAL RECTIFIER 30CLJQ100. 30A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package DLA Number 1N6843CCU3. Active INTERNATIONAL RECTIFIER TO-204AA. Part # JANTX2N6804-100V Single P-Channel Hi-Rel MOSFET in aTO-204AA package
60V, P CHANNEL 0.5) R7 TECHNOLOGY 8 2020-11-09 IRHLNJ797034 JANSR2N7624U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 SMPS MOSFET IRFP460A www.irf.com 1 TO-247AC 6/23/99 SMPS MOSFET IRFP460A HEXFET® Power MOSFET l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current CLASS D AMPLIFIER DESIGN BASICS II 9 Class AB vs. D Characteristic Comparison (1/2) Feature Class D Advantage Class AB Superior efficiency Efficiency can be improved with device technology Efficiency is fixed.AFL28XXD - IRF.COM
2 www.irf.com AFL28XXD Series Specifications Static Characteristics -55°C < T CASE < +125°C, 16V < V IN < 40V unless otherwise specified. For Notes to Specifications, refer to page 4 Input voltage INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER Higher performance & efficiencies with low risk design reuse. IR HiRel’s R9 superjunction technology platform offers notable size, weight and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known silicon gate drive setup. A simple drop-in, R9 enables a high degreeof
INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER Rad Hard High and Low Side 400V MOSFET and IGBT Gate Driver. The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
INTERNATIONAL RECTIFIER AHF2805S. 12W Total Output Power 28 Vin +5 Vout Single DC-DC Standard Converter in an AHF Package. DLA Number 5962-91600. Active IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) INTERNATIONAL RECTIFIER ASA2815D. 5W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ASA Package. DLA Number 5962-94649. Active SMPS MOSFET IRFP460A www.irf.com 1 TO-247AC 6/23/99 SMPS MOSFET IRFP460A HEXFET® Power MOSFET l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER Higher performance & efficiencies with low risk design reuse. IR HiRel’s R9 superjunction technology platform offers notable size, weight and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known silicon gate drive setup. A simple drop-in, R9 enables a high degreeof
INTERNATIONAL RECTIFIER Rad Hard High and Low Side 400V MOSFET and IGBT Gate Driver. The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) SMPS MOSFET IRFP460A www.irf.com 1 TO-247AC 6/23/99 SMPS MOSFET IRFP460A HEXFET® Power MOSFET l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current IGBT REVERSE CONDUCTION CHARACTERISTICS HARD-SWITCHING AND COMPANY CONFIDENTIAL 19 The IGBT in reverse The IGBT is a four-layer structure (P-N-P-N). It has a well-defined blocking capability in onedirection
INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of highIR PACKAGES
Locate a Distributor. Contact Us. Easily find updated package data for all of our products. So whether you are reviewing a previously scanned datasheet or you simply need access to our library of packaging information; we recommend that you please use the links below. INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. INTERNATIONAL RECTIFIER HiRel Products Sales Representative Infineon Technologies 23 Serangoon North Avenue 5 #06-02 BTH Centre, Singapore 554530 Phone: (65) 6506-2000 Fax: (65) 6506-2507 Distributors for HiRel INTERNATIONAL RECTIFIER IRHLUB7970Z4-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package. Active INTERNATIONAL RECTIFIER IRHLNJ797034-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package. Active TOPOLOGY FUNDAMENTALS The amount of ripple in the output voltage waveform. The dynamic response to load changes or input voltage changes. This topology is the most common for power factor correctors. At lower power the preferred control mode is discontinuous current for economic reasons. At higher power continuous current is preferred. INTERNATIONAL RECTIFIER 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. - IRHNJ67130 | 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of300kRads.
PD - 9.1232 IRFP460LC - IRF.COM IRFP460LC Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 6.6 9 INTERNATIONAL RECTIFIER SMD-0.5. Part # JANSF2N7647U3. 60V 100kRad Single N-Channel TID Hardened MOSFET in a SMD-0.5 package INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. INTERNATIONAL RECTIFIER Higher performance & efficiencies with low risk design reuse. IR HiRel’s R9 superjunction technology platform offers notable size, weight and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known silicon gate drive setup. INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced outputchannels.
INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active INTERNATIONAL RECTIFIER 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET - IRHLUB770Z4 | 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) SMPS MOSFET IRFP460A www.irf.com 1 TO-247AC 6/23/99 SMPS MOSFET IRFP460A HEXFET® Power MOSFET l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current IGBT REVERSE CONDUCTION CHARACTERISTICS HARD-SWITCHING AND COMPANY CONFIDENTIAL 19 The IGBT in reverse The IGBT is a four-layer structure (P-N-P-N). It has a well-defined blocking capability in onedirection
INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. INTERNATIONAL RECTIFIER Higher performance & efficiencies with low risk design reuse. IR HiRel’s R9 superjunction technology platform offers notable size, weight and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known silicon gate drive setup. INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced outputchannels.
INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active INTERNATIONAL RECTIFIER 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET - IRHLUB770Z4 | 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) SMPS MOSFET IRFP460A www.irf.com 1 TO-247AC 6/23/99 SMPS MOSFET IRFP460A HEXFET® Power MOSFET l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current IGBT REVERSE CONDUCTION CHARACTERISTICS HARD-SWITCHING AND COMPANY CONFIDENTIAL 19 The IGBT in reverse The IGBT is a four-layer structure (P-N-P-N). It has a well-defined blocking capability in onedirection
INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. INTERNATIONAL RECTIFIER HiRel Products Sales Representative Infineon Technologies 23 Serangoon North Avenue 5 #06-02 BTH Centre, Singapore 554530 Phone: (65) 6506-2000 Fax: (65) 6506-2507 Distributors for HiRel INTERNATIONAL RECTIFIER IR has a long history of providing high-reliability, radiation hardened power management solutions for space flight with products used in over 2000 space programs from launchers to satellites to space exploration vehicles. TOPOLOGY FUNDAMENTALS Electronics 101: 1. Introduction. 2. Passive Components. 3. Active Components. 4. Topology Fundamentals and Their Basis Waveforms: The function of a power circuit is to make whatever power is available suitable to the needs of the load. INTERNATIONAL RECTIFIER IRHNJ597130-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package. Active INTERNATIONAL RECTIFIER Benefits. Total Dose > 200 kRads(Si), typically usable to > 300 kRads(Si) SEE Hardened to LET up to 82 MeV.cm2/mg. Internal EMI filter; Converter Capable of meeting MIL-STD-461C CE03 INTERNATIONAL RECTIFIER 30CLJQ100. 30A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package DLA Number 1N6843CCU3. Active INTERNATIONAL RECTIFIER SMD-0.5. Part # JANSF2N7647U3. 60V 100kRad Single N-Channel TID Hardened MOSFET in a SMD-0.5 package 60V, P CHANNEL 0.5) R7 TECHNOLOGY 8 2020-11-09 IRHLNJ797034 JANSR2N7624U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER Collateral. HiRel Hermetic MOSFETs Selection Guide. Rad-Hard MOSFETs and ICs Selection Guide. TO-205AF. Part # IRFF9130. -100V Single P-Channel Hi-Rel MOSFET in a INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
PD - 9.1232 IRFP460LC - IRF.COM IRFP460LC Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 6.6 9 INTERNATIONAL RECTIFIER IRHNJ597130-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package. Active RADIATION HARDENED JANSR2N7520U3C POWER MOSFET 60V, … www.irf.com 3 Pre-Irradiation IRHNJ597034, JANSR2N7520U3 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter 1100K Rads(Si) INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER Collateral. HiRel Hermetic MOSFETs Selection Guide. Rad-Hard MOSFETs and ICs Selection Guide. TO-205AF. Part # IRFF9130. -100V Single P-Channel Hi-Rel MOSFET in a INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
PD - 9.1232 IRFP460LC - IRF.COM IRFP460LC Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 6.6 9 INTERNATIONAL RECTIFIER IRHNJ597130-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package. Active RADIATION HARDENED JANSR2N7520U3C POWER MOSFET 60V, … www.irf.com 3 Pre-Irradiation IRHNJ597034, JANSR2N7520U3 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter 1100K Rads(Si) INTERNATIONAL RECTIFIER IRHM57160. 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package. Active INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER IRHLUB7970Z4-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package. Active INTERNATIONAL RECTIFIER IRHNJ597130-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package. Active 60V, P CHANNEL 0.5) R7 TECHNOLOGY 8 2020-11-09 IRHLNJ797034 JANSR2N7624U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 IRHNJ9130 PRODUCT DATASHEET 2 2019-12-10 IRHNJ9130 Pre-Irradiation International Rectifier HiRel Products, Inc. Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) ––– ––– -11ST330C..C SERIES
ST330C..C Series 4 Bulletin I25155 rev. D 04/03 www.irf.com 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) IRHMS597260 PRODUCT DATASHEET 3 2019-01-15 IRHMS597260 JANSR2N7549T1 Pre-Irradiation International Rectifier HiRel Products, Inc. Radiation Characteristics Table 2. Typical Single Event Effect Safe Operating AreaIRGPS40B120U
IRGPS40B120U www.irf.com 3 Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature Fig. 3 - Forward SOA TC = 25°C; TJS ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V 0 20 40 60 80 100 120 140 160 TC (°C) 0 20 4060 80 100 I
IRHNJ57130 RADIATION HARDENED JANSR2N7481U3 POWER … IRHNJ57130, JANSR2N7481U3 Pre-Irradiation 6 www.irf.com Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms ˇ ≤ 1 ≤ 0.1 % INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER Collateral. HiRel Hermetic MOSFETs Selection Guide. Rad-Hard MOSFETs and ICs Selection Guide. TO-205AF. Part # IRFF9130. -100V Single P-Channel Hi-Rel MOSFET in a INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
PD - 9.1232 IRFP460LC - IRF.COM IRFP460LC Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 6.6 9 INTERNATIONAL RECTIFIER IRHNJ597130-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package. Active RADIATION HARDENED JANSR2N7520U3C POWER MOSFET 60V, … www.irf.com 3 Pre-Irradiation IRHNJ597034, JANSR2N7520U3 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter 1100K Rads(Si) INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER Collateral. HiRel Hermetic MOSFETs Selection Guide. Rad-Hard MOSFETs and ICs Selection Guide. TO-205AF. Part # IRFF9130. -100V Single P-Channel Hi-Rel MOSFET in a INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
PD - 9.1232 IRFP460LC - IRF.COM IRFP460LC Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 6.6 9 INTERNATIONAL RECTIFIER IRHNJ597130-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package. Active RADIATION HARDENED JANSR2N7520U3C POWER MOSFET 60V, … www.irf.com 3 Pre-Irradiation IRHNJ597034, JANSR2N7520U3 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter 1100K Rads(Si) INTERNATIONAL RECTIFIER IRHM57160. 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package. Active INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER IRHLUB7970Z4-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package. Active INTERNATIONAL RECTIFIER IRHNJ597130-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package. Active 60V, P CHANNEL 0.5) R7 TECHNOLOGY 8 2020-11-09 IRHLNJ797034 JANSR2N7624U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 IRHNJ9130 PRODUCT DATASHEET 2 2019-12-10 IRHNJ9130 Pre-Irradiation International Rectifier HiRel Products, Inc. Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) ––– ––– -11ST330C..C SERIES
ST330C..C Series 4 Bulletin I25155 rev. D 04/03 www.irf.com 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) IRHMS597260 PRODUCT DATASHEET 3 2019-01-15 IRHMS597260 JANSR2N7549T1 Pre-Irradiation International Rectifier HiRel Products, Inc. Radiation Characteristics Table 2. Typical Single Event Effect Safe Operating AreaIRGPS40B120U
IRGPS40B120U www.irf.com 3 Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature Fig. 3 - Forward SOA TC = 25°C; TJS ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V 0 20 40 60 80 100 120 140 160 TC (°C) 0 20 4060 80 100 I
IRHNJ57130 RADIATION HARDENED JANSR2N7481U3 POWER … IRHNJ57130, JANSR2N7481U3 Pre-Irradiation 6 www.irf.com Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms ˇ ≤ 1 ≤ 0.1 % INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER IRHM57160. 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package. Active INTERNATIONAL RECTIFIER Higher performance & efficiencies with low risk design reuse. IR HiRel’s R9 superjunction technology platform offers notable size, weight and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known silicon gate drive setup. A simple drop-in, R9 enables a high degreeof
INTERNATIONAL RECTIFIER IRHLUB7970Z4-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package. Active INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active INTERNATIONAL RECTIFIER IRHNA57163SE. 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package. Active INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) PD - 9.1232 IRFP460LC - IRF.COM IRFP460LC Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 6.6 9ST330C..C SERIES
ST330C..C Series 4 Bulletin I25155 rev. D 04/03 www.irf.com 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER IRHM57160. 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package. Active INTERNATIONAL RECTIFIER Higher performance & efficiencies with low risk design reuse. IR HiRel’s R9 superjunction technology platform offers notable size, weight and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known silicon gate drive setup. A simple drop-in, R9 enables a high degreeof
INTERNATIONAL RECTIFIER IRHLUB7970Z4-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package. Active INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active INTERNATIONAL RECTIFIER IRHNA57163SE. 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package. Active INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) PD - 9.1232 IRFP460LC - IRF.COM IRFP460LC Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 6.6 9ST330C..C SERIES
ST330C..C Series 4 Bulletin I25155 rev. D 04/03 www.irf.com 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of highIR PACKAGES
Locate a Distributor. Contact Us. Easily find updated package data for all of our products. So whether you are reviewing a previously scanned datasheet or you simply need access to our library of packaging information; we recommend that you please use the links below. INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. INTERNATIONAL RECTIFIER IRHLUB7970Z4-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package. Active INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER IRHNJ597130-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package. Active INTERNATIONAL RECTIFIER 30CLJQ100. 30A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package DLA Number 1N6843CCU3. Active IRHNJ57133SE PRODUCT DATASHEET 2 2020-11-10 IRHNJ57133SE JANSR2N7485U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)AFL28XXD - IRF.COM
2 www.irf.com AFL28XXD Series Specifications Static Characteristics -55°C < T CASE < +125°C, 16V < V IN < 40V unless otherwise specified. For Notes to Specifications, refer to page 4 Input voltage M3GB28XXXXS-D PRODUCT DATASHEET Features Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si) SEE Hardened to LET up to 82 MeV·cm2/mg Internal EMI filter; Converter Capable of meeting MIL-STD-461C CE03 Low Weight < 100 grams Magnetically Coupled Feedback 18V to 50V DC Input Range Up to 40W Output Power Single and Dual Output Models Include 3.3, 5, 5.2, 12, 15, ±5, ±7, ±12 and ±15V INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER IRHM57160. 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package. Active INTERNATIONAL RECTIFIER Higher performance & efficiencies with low risk design reuse. IR HiRel’s R9 superjunction technology platform offers notable size, weight and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known silicon gate drive setup. A simple drop-in, R9 enables a high degreeof
INTERNATIONAL RECTIFIER IRHLUB7970Z4-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package. Active INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active INTERNATIONAL RECTIFIER IRHNA57163SE. 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package. Active INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) PD - 9.1232 IRFP460LC - IRF.COM IRFP460LC Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 6.6 9ST330C..C SERIES
ST330C..C Series 4 Bulletin I25155 rev. D 04/03 www.irf.com 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER IRHM57160. 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package. Active INTERNATIONAL RECTIFIER Higher performance & efficiencies with low risk design reuse. IR HiRel’s R9 superjunction technology platform offers notable size, weight and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known silicon gate drive setup. A simple drop-in, R9 enables a high degreeof
INTERNATIONAL RECTIFIER IRHLUB7970Z4-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package. Active INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active INTERNATIONAL RECTIFIER IRHNA57163SE. 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package. Active INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) PD - 9.1232 IRFP460LC - IRF.COM IRFP460LC Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 6.6 9ST330C..C SERIES
ST330C..C Series 4 Bulletin I25155 rev. D 04/03 www.irf.com 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of highIR PACKAGES
Locate a Distributor. Contact Us. Easily find updated package data for all of our products. So whether you are reviewing a previously scanned datasheet or you simply need access to our library of packaging information; we recommend that you please use the links below. INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. INTERNATIONAL RECTIFIER IRHLUB7970Z4-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package. Active INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER IRHNJ597130-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package. Active INTERNATIONAL RECTIFIER 30CLJQ100. 30A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package DLA Number 1N6843CCU3. Active IRHNJ57133SE PRODUCT DATASHEET 2 2020-11-10 IRHNJ57133SE JANSR2N7485U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)AFL28XXD - IRF.COM
2 www.irf.com AFL28XXD Series Specifications Static Characteristics -55°C < T CASE < +125°C, 16V < V IN < 40V unless otherwise specified. For Notes to Specifications, refer to page 4 Input voltage M3GB28XXXXS-D PRODUCT DATASHEET Features Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si) SEE Hardened to LET up to 82 MeV·cm2/mg Internal EMI filter; Converter Capable of meeting MIL-STD-461C CE03 Low Weight < 100 grams Magnetically Coupled Feedback 18V to 50V DC Input Range Up to 40W Output Power Single and Dual Output Models Include 3.3, 5, 5.2, 12, 15, ±5, ±7, ±12 and ±15V INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER IRHM57160. 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package. Active INTERNATIONAL RECTIFIER Higher performance & efficiencies with low risk design reuse. IR HiRel’s R9 superjunction technology platform offers notable size, weight and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known silicon gate drive setup. A simple drop-in, R9 enables a high degreeof
INTERNATIONAL RECTIFIER IRHLUB7970Z4-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package. Active INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active INTERNATIONAL RECTIFIER IRHNA57163SE. 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package. Active INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) PD - 9.1232 IRFP460LC - IRF.COM IRFP460LC Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 6.6 9ST330C..C SERIES
ST330C..C Series 4 Bulletin I25155 rev. D 04/03 www.irf.com 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of high INTERNATIONAL RECTIFIER IRHM57160. 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package. Active INTERNATIONAL RECTIFIER Higher performance & efficiencies with low risk design reuse. IR HiRel’s R9 superjunction technology platform offers notable size, weight and power improvements over prior rad hard MOSFET generations, delivering superior performance and efficiencies with a well-known silicon gate drive setup. A simple drop-in, R9 enables a high degreeof
INTERNATIONAL RECTIFIER IRHLUB7970Z4-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package. Active INTERNATIONAL RECTIFIER ATR2815D. 30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an ATR Package. DLA Number 5962-94628. Active INTERNATIONAL RECTIFIER IRHNA57163SE. 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package. Active INTERNATIONAL RECTIFIER The RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100krad (Si) and single effect effects (SEE) characterized up toa
IRHNJ57Z30 PRODUCT DATASHEET 2 2020-11-10 IRHNJ57Z30 JANSR2N7479U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) PD - 9.1232 IRFP460LC - IRF.COM IRFP460LC Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 6.6 9ST330C..C SERIES
ST330C..C Series 4 Bulletin I25155 rev. D 04/03 www.irf.com 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) INTERNATIONAL RECTIFIER Aerospace and defense applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation that necessitates the use of radiation-hardened components. International Rectifier has been meeting this challenge for over 20 years and now offers a comprehensive portfolio of highIR PACKAGES
Locate a Distributor. Contact Us. Easily find updated package data for all of our products. So whether you are reviewing a previously scanned datasheet or you simply need access to our library of packaging information; we recommend that you please use the links below. INTERNATIONAL RECTIFIER Glossary. Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications. Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products. INTERNATIONAL RECTIFIER IRHLUB7970Z4-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package. Active INTERNATIONAL RECTIFIER Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challengefor over 25 years.
INTERNATIONAL RECTIFIER IRHNJ597130-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package. Active INTERNATIONAL RECTIFIER 30CLJQ100. 30A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package DLA Number 1N6843CCU3. Active IRHNJ57133SE PRODUCT DATASHEET 2 2020-11-10 IRHNJ57133SE JANSR2N7485U3 Pre-Irradiation International Rectifier HiRel Products, Inc. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)AFL28XXD - IRF.COM
2 www.irf.com AFL28XXD Series Specifications Static Characteristics -55°C < T CASE < +125°C, 16V < V IN < 40V unless otherwise specified. For Notes to Specifications, refer to page 4 Input voltage M3GB28XXXXS-D PRODUCT DATASHEET Features Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si) SEE Hardened to LET up to 82 MeV·cm2/mg Internal EMI filter; Converter Capable of meeting MIL-STD-461C CE03 Low Weight < 100 grams Magnetically Coupled Feedback 18V to 50V DC Input Range Up to 40W Output Power Single and Dual Output Models Include 3.3, 5, 5.2, 12, 15, ±5, ±7, ±12 and ±15VToggle Navigation
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* Lighting ICs
* Gate Driver ICs
* Motor Control ICs
* AC-DC Power Conversion* Solid State Relay
* Audio Driver ICs
* Isolated Industrial Interface * Intelligent Power Modules (IPM)ASIC
* ASIC Overview
AUTOMOTIVE SYSTEM IC * Automotive System IC Overview * Alternator Regulator * System Basis Chips (SBC) * Engine Management IC * Constant Current Control IC for Transmission BATTERY MANAGEMENT ICS * Battery Management ICs Overview ESD AND SURGE PROTECTION * ESD and Surge Protection Overview * Multi Purpose ESD Devices * Low Capacitance ESD Devices * Surge Protection DevicesHIREL
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* DC-DC converters, including custom hybrids * Radiation hardened & standard MOSFETs * HiRel Radiation Hard PowerMOS Transistor * HiRel Silicon Bipolar Transistor * HiRel Silicon Diodes* EMI filters
* Hybrids & modules
* Rad hard solid state relays * Schottky & ultra fast rectifiers * Integrated circuits (ICs)* IGBTs
32-BIT MICROCONTROLLER (MCU) * 32-bit Microcontroller (MCU) Overview * 32-bit XMC™ Industrial Microcontroller based on Arm® Cortex®-M * 32-bit AURIX™ Microcontroller based on TriCore™ * 32-bit Traveo™ II Automotive Microcontroller based on Arm® * 32-bit Automotive PSoC® 4 based on Arm® Cortex®-M * 32-bit Embedded Power ICs based on Arm® Cortex® M * Safety Products PRO-SIL™ * Legacy Products (C500, C166, XC800, XC166, XE166/XC2000, AUDO) RF & WIRELESS CONTROL * RF & Wireless Control Overview* Antenna Tuners
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* mmW Backhaul and Fronthaul* Wireless Control
* High Reliability DiscreteSENSOR
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* Pressure Sensors
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* Radar Sensors
* ToF 3D Image Sensors SECURITY & SMART CARD SOLUTIONS * Security & Smart Card Solutions Overview * CIPURSEâ„¢ products * OPTIGAâ„¢ embedded security solutions * SECORAâ„¢ security solutions * Smart card solutions for government ID * Contactless memories * Security controllers * Security controllers for USB tokens * Smart card modulesTRANSCEIVERS
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* Powertrain systemsCOMMUNICATION
* Communication overview * Cellular base stations * Telecom infrastructure * Communication switches and routers * Computing and data storage* Data processing
* E-band radio transceiver * V-band radio transceivers * Wireless communicationCONSUMER
* Consumer overview
* Wearables
* Smart building
* Home appliances
* Home entertainment* Light vehicles
* Mobile devices
* Multicopters and drones* Power tools
* Service robots
* Smart home
* Smart speaker
* Wireless charging
ENABLING TECHNOLOGIES * Enabling technologies overview* Automotive HMI
* Automotive USB Type-C * Automotive Wireless* Interface
* Memory
INDUSTRIAL
* Industrial overview * Commercial, construction and agricultural vehicles (CAV) * Energy Storage Systems* Fast EV charging
* Industrial automation* Industrial drives
* Industrial heating and welding* LED lighting
* Medical Ventilator * Motor control and drives * Portable generators * Power transmission and distribution* Robotics
* Smart building
* Solutions for solar energy systems* Space
* Traction
* Wind energy systemsSECURITY
* Security overview
* Authentication and brand protection* eSIM applications
* Government identification * NFC payment solutions* Security for IoT
* Ticketing solutionsSOLUTIONS
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* Solution Finder
* Designs & Boards
* Boards & Shields for Arduino* Simulation Models
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* Cross Reference Search* Partner Ecosystem
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