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PROTECTION DEVICE
3/5 MCCSEMI.COM ESD3V3D5,ESD5V0D5,ESD7V0D5,ESD12VD5 Symbol Min. Typ. Max. Units VRWM 7 V VBR 7.5 V IR 0.03 μA VF 0.9 V IPP 8.8 A VC 13.5 V VC 22.7 V PPK 200 W CJ 65 pF Symbol Min. Typ. Max. Units VRWM 12 V VBR 14.1 V IR 0.02 μA VF 0.9 V IPP 9.6 A VC 23 V VC 25 V PPK 240 W CJ 55 pF Peak Pulse Current tP=8/20μs Clamping Voltage IPP=5A, tP=8/20μs Clamping Voltage IPP=9.6A, tP=8/20μsN-CHANNEL MOSFET
Rev.3-3-12012020 MCCSEMI.COM Curve Characteristics 3/4 2SK3019 01 45 0 40 80 120 160 200 VGS=1.5V VGS=2.5V VGS=2V VGS=3V VGS=4V,3.5V TA=25°C Pulsed Drain Current (mA) 23 Drain to Source Voltage (V) Fig. 1 - Output Characteristics P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Rev.3- 001 1 1/5 MCCSEMI.COM SI3415B Internal Structure: Symbol Unit VDS V VGS V IDM A Total Power Dissipation PD 1.3 W-4.5 Drain Current TA=25°C Steady State TA=70°C Steady State ID-5.6 A-30 2.Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.SOD-123FL
Rev.3-3-12012020 3/4 MCCSEMI.COM Curve Characteristics DFLZ5V1 THRU DFLZ100 0 25 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Power Dissipation (W) Fig. 1 - Power Derating Curve 3.0 WATT MOUNT ZENER DIODES 5.1V TO 200V Rev.3-5-12012020 1/4 MCCSEMI.COM 3.0 Watt Surface Mount Silicon Zener Diodes 5.1V to 200V • Operating Junction Temperature Range: -55°Cto +150°C
FEATURES - MCCSEMI.COM Note: 1. Halogen free "Green” products are defined as those whichcontain
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